Abstract
Cu2ZnSnS4 thin films were deposited on soda lime glass substrates by pulsed laser deposition at various deposition temperatures. Without experiencing the sulfurization process, the single phase Cu 2ZnSnS4 thin film was deposited with no secondary phases. The grain size increased with increasing deposition temperature. The grain size at the highest temperature was approximately double than that at the lowest temperature. All Cu2ZnSnS4 thin films had a Cu-rich and S-poor state and there was a compositional change at high deposition temperature. Secondary ion mass spectrometry showed that Na ions from soda lime glass diffuse into the Cu2ZnSnS4 thin film. These Cu 2ZnSnS4 thin films deposited at 300 °C exhibited good crystallinity, largeparticle size and ideal energy band gap (Eg = 1.52 eV), which meets the critical requirements for the thin film solar cell performance.
| Original language | English |
|---|---|
| Pages (from-to) | 387-392 |
| Number of pages | 6 |
| Journal | Thin Solid Films |
| Volume | 546 |
| DOIs | |
| State | Published - 1 Nov 2013 |
UN SDGs
This output contributes to the following UN Sustainable Development Goals (SDGs)
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SDG 7 Affordable and Clean Energy
Keywords
- Pulsed laser deposition (PLD)
- Secondary ion mass spectroscopy (SIMS)
- Thin film solar cells
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