The effect of tunnel barrier at resistive switching device for low power memory applications

Hyejung Choi; Jaeyun Yi; Sangmin Hwang; Sangkeum Lee; Seokpyo Song; Seunghwan Lee; Jaeyeon Lee; Donghee Son; Jinwon Park; Suk Ju Kim; Ja Yong Kim; Sunghoon Lee; Jiwon Moon; Choidong Kim; Jungwoo Park; Moonsig Joo; Jaesung Roh; Sungki Park; Sung Woong Chung; Junghoon Rhee; Sung Joo Hong

doi:10.1109/IMW.2011.5873243

The effect of tunnel barrier at resistive switching device for low power memory applications

Hyejung Choi, Jaeyun Yi, Sangmin Hwang, Sangkeum Lee, Seokpyo Song, Seunghwan Lee, Jaeyeon Lee, Donghee Son, Jinwon Park, Suk Ju Kim, Ja Yong Kim, Sunghoon Lee, Jiwon Moon, Choidong Kim, Jungwoo Park, Moonsig Joo, Jaesung Roh, Sungki Park, Sung Woong Chung, Junghoon RheeSung Joo Hong

SK Corporation

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

12 Scopus citations

Abstract

In order to realize the high density array device and suppress the disturbance between the cells, ReRAM also seem to need a selective device same as a diode in PCRAM. Still, while appropriate bipolar selective device doesn't show up, the tunnel barrier oxide embedded in ReRAM stack is one of the promising candidates for selective device of bipolar resistive switching memory. Additionally, using a tunnel barrier has a benefit to reduce the switching current. In this paper, bipolar memory devices with oxides such as HfO _x, ZrO_x and AlO_x as a tunnel barrier were fabricated with 40 ∼ 80nm cell size. We showed that the switching current and inherent switching mechanism can be successfully controlled by proper tunnel barrier materials and stacks.

Original language	English
Title of host publication	2011 3rd IEEE International Memory Workshop, IMW 2011
DOIs	https://doi.org/10.1109/IMW.2011.5873243
State	Published - 2011
Externally published	Yes
Event	2011 3rd IEEE International Memory Workshop, IMW 2011 - Monterey, CA, United States Duration: 22 May 2011 → 25 May 2011

Publication series

Name	2011 3rd IEEE International Memory Workshop, IMW 2011

Conference

Conference	2011 3rd IEEE International Memory Workshop, IMW 2011
Country/Territory	United States
City	Monterey, CA
Period	22/05/11 → 25/05/11

Keywords

component
heterostructure
oxide enthalpy of formation
resistive switching
tunnel barrier

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10.1109/IMW.2011.5873243

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Choi, H., Yi, J., Hwang, S., Lee, S., Song, S., Lee, S., Lee, J., Son, D., Park, J., Kim, S. J., Kim, J. Y., Lee, S., Moon, J., Kim, C., Park, J., Joo, M., Roh, J., Park, S., Chung, S. W., ... Hong, S. J. (2011). The effect of tunnel barrier at resistive switching device for low power memory applications. In 2011 3rd IEEE International Memory Workshop, IMW 2011 Article 5873243 (2011 3rd IEEE International Memory Workshop, IMW 2011). https://doi.org/10.1109/IMW.2011.5873243

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title = "The effect of tunnel barrier at resistive switching device for low power memory applications",

abstract = "In order to realize the high density array device and suppress the disturbance between the cells, ReRAM also seem to need a selective device same as a diode in PCRAM. Still, while appropriate bipolar selective device doesn't show up, the tunnel barrier oxide embedded in ReRAM stack is one of the promising candidates for selective device of bipolar resistive switching memory. Additionally, using a tunnel barrier has a benefit to reduce the switching current. In this paper, bipolar memory devices with oxides such as HfO x, ZrOx and AlOx as a tunnel barrier were fabricated with 40 ∼ 80nm cell size. We showed that the switching current and inherent switching mechanism can be successfully controlled by proper tunnel barrier materials and stacks.",

keywords = "component, heterostructure, oxide enthalpy of formation, resistive switching, tunnel barrier",

author = "Hyejung Choi and Jaeyun Yi and Sangmin Hwang and Sangkeum Lee and Seokpyo Song and Seunghwan Lee and Jaeyeon Lee and Donghee Son and Jinwon Park and Kim, \{Suk Ju\} and Kim, \{Ja Yong\} and Sunghoon Lee and Jiwon Moon and Choidong Kim and Jungwoo Park and Moonsig Joo and Jaesung Roh and Sungki Park and Chung, \{Sung Woong\} and Junghoon Rhee and Hong, \{Sung Joo\}",

year = "2011",

doi = "10.1109/IMW.2011.5873243",

language = "English",

isbn = "9781457702266",

series = "2011 3rd IEEE International Memory Workshop, IMW 2011",

booktitle = "2011 3rd IEEE International Memory Workshop, IMW 2011",

note = "2011 3rd IEEE International Memory Workshop, IMW 2011 ; Conference date: 22-05-2011 Through 25-05-2011",

}

Choi, H, Yi, J, Hwang, S, Lee, S, Song, S, Lee, S, Lee, J, Son, D, Park, J, Kim, SJ, Kim, JY, Lee, S, Moon, J, Kim, C, Park, J, Joo, M, Roh, J, Park, S, Chung, SW, Rhee, J & Hong, SJ 2011, The effect of tunnel barrier at resistive switching device for low power memory applications. in 2011 3rd IEEE International Memory Workshop, IMW 2011., 5873243, 2011 3rd IEEE International Memory Workshop, IMW 2011, 2011 3rd IEEE International Memory Workshop, IMW 2011, Monterey, CA, United States, 22/05/11. https://doi.org/10.1109/IMW.2011.5873243

The effect of tunnel barrier at resistive switching device for low power memory applications. / Choi, Hyejung; Yi, Jaeyun; Hwang, Sangmin et al.
2011 3rd IEEE International Memory Workshop, IMW 2011. 2011. 5873243 (2011 3rd IEEE International Memory Workshop, IMW 2011).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Choi, Hyejung

AU - Yi, Jaeyun

AU - Hwang, Sangmin

AU - Lee, Sangkeum

AU - Song, Seokpyo

AU - Lee, Seunghwan

AU - Lee, Jaeyeon

AU - Son, Donghee

AU - Park, Jinwon

AU - Kim, Suk Ju

AU - Kim, Ja Yong

AU - Lee, Sunghoon

AU - Moon, Jiwon

AU - Kim, Choidong

AU - Park, Jungwoo

AU - Joo, Moonsig

AU - Roh, Jaesung

AU - Park, Sungki

AU - Chung, Sung Woong

AU - Rhee, Junghoon

AU - Hong, Sung Joo

PY - 2011

Y1 - 2011

N2 - In order to realize the high density array device and suppress the disturbance between the cells, ReRAM also seem to need a selective device same as a diode in PCRAM. Still, while appropriate bipolar selective device doesn't show up, the tunnel barrier oxide embedded in ReRAM stack is one of the promising candidates for selective device of bipolar resistive switching memory. Additionally, using a tunnel barrier has a benefit to reduce the switching current. In this paper, bipolar memory devices with oxides such as HfO x, ZrOx and AlOx as a tunnel barrier were fabricated with 40 ∼ 80nm cell size. We showed that the switching current and inherent switching mechanism can be successfully controlled by proper tunnel barrier materials and stacks.

AB - In order to realize the high density array device and suppress the disturbance between the cells, ReRAM also seem to need a selective device same as a diode in PCRAM. Still, while appropriate bipolar selective device doesn't show up, the tunnel barrier oxide embedded in ReRAM stack is one of the promising candidates for selective device of bipolar resistive switching memory. Additionally, using a tunnel barrier has a benefit to reduce the switching current. In this paper, bipolar memory devices with oxides such as HfO x, ZrOx and AlOx as a tunnel barrier were fabricated with 40 ∼ 80nm cell size. We showed that the switching current and inherent switching mechanism can be successfully controlled by proper tunnel barrier materials and stacks.

KW - component

KW - heterostructure

KW - oxide enthalpy of formation

KW - resistive switching

KW - tunnel barrier

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M3 - Conference contribution

AN - SCOPUS:79959958401

SN - 9781457702266

T3 - 2011 3rd IEEE International Memory Workshop, IMW 2011

BT - 2011 3rd IEEE International Memory Workshop, IMW 2011

T2 - 2011 3rd IEEE International Memory Workshop, IMW 2011

Y2 - 22 May 2011 through 25 May 2011

ER -

The effect of tunnel barrier at resistive switching device for low power memory applications

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