The effect of substrate temperature on Al-doped ZnO characteristics for organic thin film transistor applications

Yong Seob Park; Moon Soo Seo; Jin Sa Kim; Jaehyeong Lee

doi:10.1016/j.materresbull.2013.06.001

The effect of substrate temperature on Al-doped ZnO characteristics for organic thin film transistor applications

Yong Seob Park
, Moon Soo Seo
, Jin Sa Kim
, Jaehyeong Lee

Department of Electronic and Electrical Engineering

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

The influence of substrate temperature on the structural, electrical, and optical properties of aluminum-doped zinc oxide (AZO) films fabricated by radio frequency (RF) magnetron sputtering was investigated. The AZO films were deposited at various substrate temperatures, and the effect of AZO gate electrode conductivity on organic thin film transistor (OTFT) performance was examined. While an increase in the substrate temperature from 100 °C to 300 °C led to an improvement in crystallinity, substrate temperatures over 300 °C caused degradation of the electrical and surface properties. We fabricated OTFTs using AZO films prepared at various substrate temperatures and obtained good device performance. Thus, the performance of an OTFT can be determined by the conductivity of the AZO gate electrode.

Original language	English
Pages (from-to)	5136-5140
Number of pages	5
Journal	Materials Research Bulletin
Volume	48
Issue number	12
DOIs	https://doi.org/10.1016/j.materresbull.2013.06.001
State	Published - 2013

Keywords

A. Oxides
A. Thin films
B. Optical properties
B. Sputtering
D. Electrical properties

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10.1016/j.materresbull.2013.06.001

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title = "The effect of substrate temperature on Al-doped ZnO characteristics for organic thin film transistor applications",

abstract = "The influence of substrate temperature on the structural, electrical, and optical properties of aluminum-doped zinc oxide (AZO) films fabricated by radio frequency (RF) magnetron sputtering was investigated. The AZO films were deposited at various substrate temperatures, and the effect of AZO gate electrode conductivity on organic thin film transistor (OTFT) performance was examined. While an increase in the substrate temperature from 100 °C to 300 °C led to an improvement in crystallinity, substrate temperatures over 300 °C caused degradation of the electrical and surface properties. We fabricated OTFTs using AZO films prepared at various substrate temperatures and obtained good device performance. Thus, the performance of an OTFT can be determined by the conductivity of the AZO gate electrode.",

keywords = "A. Oxides, A. Thin films, B. Optical properties, B. Sputtering, D. Electrical properties",

author = "Park, \{Yong Seob\} and Seo, \{Moon Soo\} and Kim, \{Jin Sa\} and Jaehyeong Lee",

year = "2013",

doi = "10.1016/j.materresbull.2013.06.001",

language = "English",

volume = "48",

pages = "5136--5140",

journal = "Materials Research Bulletin",

issn = "0025-5408",

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T1 - The effect of substrate temperature on Al-doped ZnO characteristics for organic thin film transistor applications

AU - Park, Yong Seob

AU - Seo, Moon Soo

AU - Kim, Jin Sa

AU - Lee, Jaehyeong

PY - 2013

Y1 - 2013

N2 - The influence of substrate temperature on the structural, electrical, and optical properties of aluminum-doped zinc oxide (AZO) films fabricated by radio frequency (RF) magnetron sputtering was investigated. The AZO films were deposited at various substrate temperatures, and the effect of AZO gate electrode conductivity on organic thin film transistor (OTFT) performance was examined. While an increase in the substrate temperature from 100 °C to 300 °C led to an improvement in crystallinity, substrate temperatures over 300 °C caused degradation of the electrical and surface properties. We fabricated OTFTs using AZO films prepared at various substrate temperatures and obtained good device performance. Thus, the performance of an OTFT can be determined by the conductivity of the AZO gate electrode.

AB - The influence of substrate temperature on the structural, electrical, and optical properties of aluminum-doped zinc oxide (AZO) films fabricated by radio frequency (RF) magnetron sputtering was investigated. The AZO films were deposited at various substrate temperatures, and the effect of AZO gate electrode conductivity on organic thin film transistor (OTFT) performance was examined. While an increase in the substrate temperature from 100 °C to 300 °C led to an improvement in crystallinity, substrate temperatures over 300 °C caused degradation of the electrical and surface properties. We fabricated OTFTs using AZO films prepared at various substrate temperatures and obtained good device performance. Thus, the performance of an OTFT can be determined by the conductivity of the AZO gate electrode.

KW - A. Oxides

KW - A. Thin films

KW - B. Optical properties

KW - B. Sputtering

KW - D. Electrical properties

UR - https://www.scopus.com/pages/publications/84885951306

U2 - 10.1016/j.materresbull.2013.06.001

DO - 10.1016/j.materresbull.2013.06.001

M3 - Article

AN - SCOPUS:84885951306

SN - 0025-5408

VL - 48

SP - 5136

EP - 5140

JO - Materials Research Bulletin

JF - Materials Research Bulletin

IS - 12

ER -

The effect of substrate temperature on Al-doped ZnO characteristics for organic thin film transistor applications

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Keywords

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