TY - JOUR
T1 - The effect of deposition temperature on the electrical and physical properties of the Ba(Zr, Ti)O3 thin films
AU - Seok Choi, Won
AU - Sik Jang, Bum
AU - Roh, Yonghan
AU - Yi, Junsin
AU - Hong, Byungyou
PY - 2002/5
Y1 - 2002/5
N2 - We investigated the structural and electrical properties of the Ba(ZrxTi1-x)O3 (BZT) thin films with a mole fraction of x = 0.2. BZT films were prepared on Pt/SiO2/Si substrate with rf magnetron sputter deposition. For a substrate temperature above 500 °C, multi-crystalline BZT films oriented to (1 1 0), (1 1 1), and (2 0 0) directions were formed. This paper reports results from the BZT film deposited at 400 °C with the following characteristics; the dielectric constant of 95, dissipation factor of 0.021 at 1 MHz, and the leakage current of 2.32 × 10-7 A/cm2 at 1 MV/cm. We produced a polycrystalline BZT film with an excellent electrical stability at a substrate temperature as low as 400 °C.
AB - We investigated the structural and electrical properties of the Ba(ZrxTi1-x)O3 (BZT) thin films with a mole fraction of x = 0.2. BZT films were prepared on Pt/SiO2/Si substrate with rf magnetron sputter deposition. For a substrate temperature above 500 °C, multi-crystalline BZT films oriented to (1 1 0), (1 1 1), and (2 0 0) directions were formed. This paper reports results from the BZT film deposited at 400 °C with the following characteristics; the dielectric constant of 95, dissipation factor of 0.021 at 1 MHz, and the leakage current of 2.32 × 10-7 A/cm2 at 1 MV/cm. We produced a polycrystalline BZT film with an excellent electrical stability at a substrate temperature as low as 400 °C.
UR - https://www.scopus.com/pages/publications/0036567712
U2 - 10.1016/S0022-3093(02)00984-5
DO - 10.1016/S0022-3093(02)00984-5
M3 - Article
AN - SCOPUS:0036567712
SN - 0022-3093
VL - 303
SP - 190
EP - 193
JO - Journal of Non-Crystalline Solids
JF - Journal of Non-Crystalline Solids
IS - 1
ER -