The effect of deposition temperature on the electrical and physical properties of the Ba(Zr, Ti)O₃ thin films

We investigated the structural and electrical properties of the Ba(Zr_xTi_1-x)O₃ (BZT) thin films with a mole fraction of x = 0.2. BZT films were prepared on Pt/SiO₂/Si substrate with rf magnetron sputter deposition. For a substrate temperature above 500 °C, multi-crystalline BZT films oriented to (1 1 0), (1 1 1), and (2 0 0) directions were formed. This paper reports results from the BZT film deposited at 400 °C with the following characteristics; the dielectric constant of 95, dissipation factor of 0.021 at 1 MHz, and the leakage current of 2.32 × 10^-7 A/cm² at 1 MV/cm. We produced a polycrystalline BZT film with an excellent electrical stability at a substrate temperature as low as 400 °C.