The effect of controlled P1 and P2 in synthetic spin valve with Mn-Ir-Pt exchange biasing layer

D. M. Jeon; J. H. Kim; Y. S. Kim; S. Y. Yoon; D. H. Lee; D. H. Yoon; S. J. Suh

doi:10.1016/S0304-8853(01)00560-1

The effect of controlled P1 and P2 in synthetic spin valve with Mn-Ir-Pt exchange biasing layer

D. M. Jeon
, J. H. Kim
, Y. S. Kim
, S. Y. Yoon
, D. H. Lee
, D. H. Yoon
, S. J. Suh

Department of Advanced Materials Science and Engineering

Sungkyunkwan University

Research output: Contribution to journal › Article › peer-review

Abstract

Synthetic top and bottom spin valves including the Mn-Ir-Pt/Co-Fe (P1)/Ru/Co - Fe (P2) synthetic pinned layer were prepared by controlling the thickness difference (Δt = P1 - P2) of Co-Fe layers. The effective exchange field (H_eff,ex) and giant magnetoresistance (GMR) properties of both synthetic type SVs were investigated as a function of Δt. The H_eff,ex was dependent largely on the Δt. The GMR properties are strongly dependent on the stacking sequence of synthetic SVs and Δt. Based on the magnetic and electrical properties at room temperature, the thermal stability of synthetic SVs was also evaluated at various elevated temperatures in both types of SVs.

Original language	English
Pages (from-to)	207-209
Number of pages	3
Journal	Journal of Magnetism and Magnetic Materials
Volume	239
Issue number	1-3
DOIs	https://doi.org/10.1016/S0304-8853(01)00560-1
State	Published - Feb 2002

Keywords

Effective exchange field
GMR
Spin valve
Synthetic pinned layer

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10.1016/S0304-8853(01)00560-1

Cite this

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title = "The effect of controlled P1 and P2 in synthetic spin valve with Mn-Ir-Pt exchange biasing layer",

abstract = "Synthetic top and bottom spin valves including the Mn-Ir-Pt/Co-Fe (P1)/Ru/Co - Fe (P2) synthetic pinned layer were prepared by controlling the thickness difference (Δt = P1 - P2) of Co-Fe layers. The effective exchange field (Heff,ex) and giant magnetoresistance (GMR) properties of both synthetic type SVs were investigated as a function of Δt. The Heff,ex was dependent largely on the Δt. The GMR properties are strongly dependent on the stacking sequence of synthetic SVs and Δt. Based on the magnetic and electrical properties at room temperature, the thermal stability of synthetic SVs was also evaluated at various elevated temperatures in both types of SVs.",

keywords = "Effective exchange field, GMR, Spin valve, Synthetic pinned layer",

author = "Jeon, \{D. M.\} and Kim, \{J. H.\} and Kim, \{Y. S.\} and Yoon, \{S. Y.\} and Lee, \{D. H.\} and Yoon, \{D. H.\} and Suh, \{S. J.\}",

year = "2002",

month = feb,

doi = "10.1016/S0304-8853(01)00560-1",

language = "English",

volume = "239",

pages = "207--209",

journal = "Journal of Magnetism and Magnetic Materials",

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TY - JOUR

T1 - The effect of controlled P1 and P2 in synthetic spin valve with Mn-Ir-Pt exchange biasing layer

AU - Jeon, D. M.

AU - Kim, J. H.

AU - Kim, Y. S.

AU - Yoon, S. Y.

AU - Lee, D. H.

AU - Yoon, D. H.

AU - Suh, S. J.

PY - 2002/2

Y1 - 2002/2

N2 - Synthetic top and bottom spin valves including the Mn-Ir-Pt/Co-Fe (P1)/Ru/Co - Fe (P2) synthetic pinned layer were prepared by controlling the thickness difference (Δt = P1 - P2) of Co-Fe layers. The effective exchange field (Heff,ex) and giant magnetoresistance (GMR) properties of both synthetic type SVs were investigated as a function of Δt. The Heff,ex was dependent largely on the Δt. The GMR properties are strongly dependent on the stacking sequence of synthetic SVs and Δt. Based on the magnetic and electrical properties at room temperature, the thermal stability of synthetic SVs was also evaluated at various elevated temperatures in both types of SVs.

AB - Synthetic top and bottom spin valves including the Mn-Ir-Pt/Co-Fe (P1)/Ru/Co - Fe (P2) synthetic pinned layer were prepared by controlling the thickness difference (Δt = P1 - P2) of Co-Fe layers. The effective exchange field (Heff,ex) and giant magnetoresistance (GMR) properties of both synthetic type SVs were investigated as a function of Δt. The Heff,ex was dependent largely on the Δt. The GMR properties are strongly dependent on the stacking sequence of synthetic SVs and Δt. Based on the magnetic and electrical properties at room temperature, the thermal stability of synthetic SVs was also evaluated at various elevated temperatures in both types of SVs.

KW - Effective exchange field

KW - GMR

KW - Spin valve

KW - Synthetic pinned layer

UR - https://www.scopus.com/pages/publications/0036466026

U2 - 10.1016/S0304-8853(01)00560-1

DO - 10.1016/S0304-8853(01)00560-1

M3 - Article

AN - SCOPUS:0036466026

SN - 0304-8853

VL - 239

SP - 207

EP - 209

JO - Journal of Magnetism and Magnetic Materials

JF - Journal of Magnetism and Magnetic Materials

IS - 1-3

ER -

The effect of controlled P1 and P2 in synthetic spin valve with Mn-Ir-Pt exchange biasing layer

Abstract

Keywords

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