Abstract
The effect of C60 doping in the hole transport layer on the device performance of phosphorescent light-emitting diodes was investigated by changing the C60 content from 0% to 3%. Doping of C60 in 1,3,5-tris(N,N-bis-(4,5- methoxyphenyl)-aminophenyl)benzol resulted in efficient hole injection and low driving voltage at high luminance. In addition, the lifetime of the phosphorescent device was improved significantly by introducing a C60 molecule in the hole transport layer. The C60-doped device showed an extended lifetime of 1400 h compared with 700 h of the undoped device.
| Original language | English |
|---|---|
| Article number | 063514 |
| Pages (from-to) | 1-3 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 86 |
| Issue number | 6 |
| DOIs | |
| State | Published - 7 Feb 2005 |
| Externally published | Yes |
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