The effect of AlN and flux addition on luminescence properties of Ce doped TAG phosphor for white light emitting diodes

T. Y. Choi; Y. H. Song; H. R. Lee; K. Senthil; T. Masaki; D. H. Yoon

doi:10.1016/j.mseb.2011.10.005

The effect of AlN and flux addition on luminescence properties of Ce doped TAG phosphor for white light emitting diodes

T. Y. Choi
, Y. H. Song
, H. R. Lee
, K. Senthil
, T. Masaki
, D. H. Yoon

Department of Advanced Materials Science and Engineering

Sungkyunkwan University

Research output: Contribution to journal › Article › peer-review

20 Scopus citations

Abstract

A series of Ce³⁺-activated Tb₃Al₅O ₁₂ green-yellow phosphors were synthesized using solid state reaction method. The X-ray diffraction peaks of the synthesized phosphor were well matched to the Tb₃Al₅O₁₂ reference peak data. As the addition amount of AlN increase, the relative intensity of diffraction peak increase. But, the addition amount of AlN is over 0.3 mol, the second phase TbAlO₃ diffraction peaks increase. When the addition amount of AlN is 0.3 mol, PL shows the highest emission efficiency. These results were explained by the reducing atmosphere made using AlN. The highest emission intensity was observed when the Ce³⁺ concentration is 0.25 mol. The emission intensity of the Tb_2.75Al₅O₁₂:Ce _0.25³⁺ phosphors were increased by adding BaF₂ and KNO₃ as a flux. The yellow emitting Tb₃Al ₅O₁₂:Ce³⁺ phosphors obtained could be applied as white LEDs.

Original language	English
Pages (from-to)	500-503
Number of pages	4
Journal	Materials Science and Engineering B
Volume	177
Issue number	7
DOIs	https://doi.org/10.1016/j.mseb.2011.10.005
State	Published - 25 Apr 2012

Keywords

Optical materials
Photoluminescence
X-ray diffraction

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10.1016/j.mseb.2011.10.005

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@article{c786bfb73a8c455282ced0960e783132,

title = "The effect of AlN and flux addition on luminescence properties of Ce doped TAG phosphor for white light emitting diodes",

abstract = "A series of Ce3+-activated Tb3Al5O 12 green-yellow phosphors were synthesized using solid state reaction method. The X-ray diffraction peaks of the synthesized phosphor were well matched to the Tb3Al5O12 reference peak data. As the addition amount of AlN increase, the relative intensity of diffraction peak increase. But, the addition amount of AlN is over 0.3 mol, the second phase TbAlO3 diffraction peaks increase. When the addition amount of AlN is 0.3 mol, PL shows the highest emission efficiency. These results were explained by the reducing atmosphere made using AlN. The highest emission intensity was observed when the Ce3+ concentration is 0.25 mol. The emission intensity of the Tb2.75Al5O12:Ce 0.253+ phosphors were increased by adding BaF2 and KNO3 as a flux. The yellow emitting Tb3Al 5O12:Ce3+ phosphors obtained could be applied as white LEDs.",

keywords = "Optical materials, Photoluminescence, X-ray diffraction",

author = "Choi, \{T. Y.\} and Song, \{Y. H.\} and Lee, \{H. R.\} and K. Senthil and T. Masaki and Yoon, \{D. H.\}",

year = "2012",

month = apr,

day = "25",

doi = "10.1016/j.mseb.2011.10.005",

language = "English",

volume = "177",

pages = "500--503",

journal = "Materials Science and Engineering B",

issn = "0921-5107",

publisher = "Elsevier Ltd",

number = "7",

}

TY - JOUR

T1 - The effect of AlN and flux addition on luminescence properties of Ce doped TAG phosphor for white light emitting diodes

AU - Choi, T. Y.

AU - Song, Y. H.

AU - Lee, H. R.

AU - Senthil, K.

AU - Masaki, T.

AU - Yoon, D. H.

PY - 2012/4/25

Y1 - 2012/4/25

N2 - A series of Ce3+-activated Tb3Al5O 12 green-yellow phosphors were synthesized using solid state reaction method. The X-ray diffraction peaks of the synthesized phosphor were well matched to the Tb3Al5O12 reference peak data. As the addition amount of AlN increase, the relative intensity of diffraction peak increase. But, the addition amount of AlN is over 0.3 mol, the second phase TbAlO3 diffraction peaks increase. When the addition amount of AlN is 0.3 mol, PL shows the highest emission efficiency. These results were explained by the reducing atmosphere made using AlN. The highest emission intensity was observed when the Ce3+ concentration is 0.25 mol. The emission intensity of the Tb2.75Al5O12:Ce 0.253+ phosphors were increased by adding BaF2 and KNO3 as a flux. The yellow emitting Tb3Al 5O12:Ce3+ phosphors obtained could be applied as white LEDs.

AB - A series of Ce3+-activated Tb3Al5O 12 green-yellow phosphors were synthesized using solid state reaction method. The X-ray diffraction peaks of the synthesized phosphor were well matched to the Tb3Al5O12 reference peak data. As the addition amount of AlN increase, the relative intensity of diffraction peak increase. But, the addition amount of AlN is over 0.3 mol, the second phase TbAlO3 diffraction peaks increase. When the addition amount of AlN is 0.3 mol, PL shows the highest emission efficiency. These results were explained by the reducing atmosphere made using AlN. The highest emission intensity was observed when the Ce3+ concentration is 0.25 mol. The emission intensity of the Tb2.75Al5O12:Ce 0.253+ phosphors were increased by adding BaF2 and KNO3 as a flux. The yellow emitting Tb3Al 5O12:Ce3+ phosphors obtained could be applied as white LEDs.

KW - Optical materials

KW - Photoluminescence

KW - X-ray diffraction

UR - https://www.scopus.com/pages/publications/84859426248

U2 - 10.1016/j.mseb.2011.10.005

DO - 10.1016/j.mseb.2011.10.005

M3 - Article

AN - SCOPUS:84859426248

SN - 0921-5107

VL - 177

SP - 500

EP - 503

JO - Materials Science and Engineering B

JF - Materials Science and Engineering B

IS - 7

ER -

The effect of AlN and flux addition on luminescence properties of Ce doped TAG phosphor for white light emitting diodes

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Keywords

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