The distribution of Cu and resultant resistivity change in sputter deposited Al-Cu film as a conductive layer

D. H. Lee; D. M. Jeon; S. Y. Yoon; J. P. Lee; B. G. Kim; S. J. Suh

doi:10.1016/S0040-6090(03)00338-9

The distribution of Cu and resultant resistivity change in sputter deposited Al-Cu film as a conductive layer

D. H. Lee
, D. M. Jeon
, S. Y. Yoon
, J. P. Lee
, B. G. Kim
, S. J. Suh

Department of Advanced Materials Science and Engineering

Sungkyunkwan University

Research output: Contribution to journal › Conference article › peer-review

6 Scopus citations

Abstract

As a conductive layer, sputter-deposited Al-Cu 1 at.% thin film was investigated, with particular focus on the effect of Cu precipitates and film strain on the electric conductivity. The 400-nm-thick film was deposited on Si wafer and heat-treated at 200 and 480 °C. Cu precipitation was investigated using electron microscopy and film strain using XRD. As a result of heat treatment, changes in the electric resistivity showed the same trend as the film strain. This study concluded that the trends in resistivity and film stress could be related to Cu precipitation to some extent. In other words, the resistivity changes depending on whether the precipitates are coherent with the Al matrix and on the distribution of the precipitates.

Original language	English
Pages (from-to)	170-173
Number of pages	4
Journal	Thin Solid Films
Volume	435
Issue number	1-2
DOIs	https://doi.org/10.1016/S0040-6090(03)00338-9
State	Published - 1 Jul 2003
Event	Proccedings of the Joint International Plasma Symposium - Jeju Island, Korea, Republic of Duration: 1 Jul 2002 → 4 Jul 2002

Keywords

Metallization
Precipitation
Resistivity
Strain

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10.1016/S0040-6090(03)00338-9

Cite this

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title = "The distribution of Cu and resultant resistivity change in sputter deposited Al-Cu film as a conductive layer",

abstract = "As a conductive layer, sputter-deposited Al-Cu 1 at.\% thin film was investigated, with particular focus on the effect of Cu precipitates and film strain on the electric conductivity. The 400-nm-thick film was deposited on Si wafer and heat-treated at 200 and 480 °C. Cu precipitation was investigated using electron microscopy and film strain using XRD. As a result of heat treatment, changes in the electric resistivity showed the same trend as the film strain. This study concluded that the trends in resistivity and film stress could be related to Cu precipitation to some extent. In other words, the resistivity changes depending on whether the precipitates are coherent with the Al matrix and on the distribution of the precipitates.",

keywords = "Metallization, Precipitation, Resistivity, Strain",

author = "Lee, \{D. H.\} and Jeon, \{D. M.\} and Yoon, \{S. Y.\} and Lee, \{J. P.\} and Kim, \{B. G.\} and Suh, \{S. J.\}",

year = "2003",

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doi = "10.1016/S0040-6090(03)00338-9",

language = "English",

volume = "435",

pages = "170--173",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier B.V.",

number = "1-2",

note = "Proccedings of the Joint International Plasma Symposium ; Conference date: 01-07-2002 Through 04-07-2002",

}

TY - JOUR

T1 - The distribution of Cu and resultant resistivity change in sputter deposited Al-Cu film as a conductive layer

AU - Lee, D. H.

AU - Jeon, D. M.

AU - Yoon, S. Y.

AU - Lee, J. P.

AU - Kim, B. G.

AU - Suh, S. J.

PY - 2003/7/1

Y1 - 2003/7/1

N2 - As a conductive layer, sputter-deposited Al-Cu 1 at.% thin film was investigated, with particular focus on the effect of Cu precipitates and film strain on the electric conductivity. The 400-nm-thick film was deposited on Si wafer and heat-treated at 200 and 480 °C. Cu precipitation was investigated using electron microscopy and film strain using XRD. As a result of heat treatment, changes in the electric resistivity showed the same trend as the film strain. This study concluded that the trends in resistivity and film stress could be related to Cu precipitation to some extent. In other words, the resistivity changes depending on whether the precipitates are coherent with the Al matrix and on the distribution of the precipitates.

AB - As a conductive layer, sputter-deposited Al-Cu 1 at.% thin film was investigated, with particular focus on the effect of Cu precipitates and film strain on the electric conductivity. The 400-nm-thick film was deposited on Si wafer and heat-treated at 200 and 480 °C. Cu precipitation was investigated using electron microscopy and film strain using XRD. As a result of heat treatment, changes in the electric resistivity showed the same trend as the film strain. This study concluded that the trends in resistivity and film stress could be related to Cu precipitation to some extent. In other words, the resistivity changes depending on whether the precipitates are coherent with the Al matrix and on the distribution of the precipitates.

KW - Metallization

KW - Precipitation

KW - Resistivity

KW - Strain

UR - https://www.scopus.com/pages/publications/0037671260

U2 - 10.1016/S0040-6090(03)00338-9

DO - 10.1016/S0040-6090(03)00338-9

M3 - Conference article

AN - SCOPUS:0037671260

SN - 0040-6090

VL - 435

SP - 170

EP - 173

JO - Thin Solid Films

JF - Thin Solid Films

IS - 1-2

T2 - Proccedings of the Joint International Plasma Symposium

Y2 - 1 July 2002 through 4 July 2002

ER -

The distribution of Cu and resultant resistivity change in sputter deposited Al-Cu film as a conductive layer

Abstract

Keywords

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