The dielectric properties of Pb0.65Ba0.35ZrO 3 thin films applicable to microwave tunable devices

J. S. Kim; B. H. Park; T. J. Choi; S. H. Shin; J. C. Lee; M. J. Lee; S. A. Seo; I. K. Yoo

doi:10.1080/10584580490895112

The dielectric properties of Pb_0.65Ba_0.35ZrO ₃ thin films applicable to microwave tunable devices

J. S. Kim
, B. H. Park
, T. J. Choi
, S. H. Shin
, J. C. Lee
, M. J. Lee
, S. A. Seo
, I. K. Yoo

Department of Advanced Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

Pb_0.65Ba_0.35ZrO₃ (PBZ) thin films have been grown on MgO (001) substrates by pulsed-laser deposition (PLD). We have compared the structural and dielectric properties of PBZ films grown at various temperatures. A highly c-axis oriented PBZ film has been grown on a MgO (001) substrate at the deposition temperature of 550°C and has also shown the largest tunability among all the PBZ films in capacitance-voltage measurements. The tunability and dielectric loss of the PBZ film was 20% and 0.00959, respectively. In addition, we have compared the temperature coefficient of capacitance (TCC) of a PBZ film with that of a Ba_0.5Sr _0.5TiO₃ (BST) film which is a well-known material applicable to tunable microwave devices. We have confirmed that TCC value of a PBZ thin film was three-times smaller than that of a BST thin film.

Original language	English
Pages (from-to)	205-211
Number of pages	7
Journal	Integrated Ferroelectrics
Volume	66
DOIs	https://doi.org/10.1080/10584580490895112
State	Published - 2004

Keywords

BST
Microwave tunable device
PBZ
Pulsed laser deposition
TCC
Tunability

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10.1080/10584580490895112

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@article{13141883a97c4c7b99afe16592850990,

title = "The dielectric properties of Pb0.65Ba0.35ZrO 3 thin films applicable to microwave tunable devices",

abstract = "Pb0.65Ba0.35ZrO3 (PBZ) thin films have been grown on MgO (001) substrates by pulsed-laser deposition (PLD). We have compared the structural and dielectric properties of PBZ films grown at various temperatures. A highly c-axis oriented PBZ film has been grown on a MgO (001) substrate at the deposition temperature of 550°C and has also shown the largest tunability among all the PBZ films in capacitance-voltage measurements. The tunability and dielectric loss of the PBZ film was 20\% and 0.00959, respectively. In addition, we have compared the temperature coefficient of capacitance (TCC) of a PBZ film with that of a Ba0.5Sr 0.5TiO3 (BST) film which is a well-known material applicable to tunable microwave devices. We have confirmed that TCC value of a PBZ thin film was three-times smaller than that of a BST thin film.",

keywords = "BST, Microwave tunable device, PBZ, Pulsed laser deposition, TCC, Tunability",

author = "Kim, \{J. S.\} and Park, \{B. H.\} and Choi, \{T. J.\} and Shin, \{S. H.\} and Lee, \{J. C.\} and Lee, \{M. J.\} and Seo, \{S. A.\} and Yoo, \{I. K.\}",

year = "2004",

doi = "10.1080/10584580490895112",

language = "English",

volume = "66",

pages = "205--211",

journal = "Integrated Ferroelectrics",

issn = "1058-4587",

publisher = "Taylor and Francis Ltd.",

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TY - JOUR

T1 - The dielectric properties of Pb0.65Ba0.35ZrO 3 thin films applicable to microwave tunable devices

AU - Kim, J. S.

AU - Park, B. H.

AU - Choi, T. J.

AU - Shin, S. H.

AU - Lee, J. C.

AU - Lee, M. J.

AU - Seo, S. A.

AU - Yoo, I. K.

PY - 2004

Y1 - 2004

N2 - Pb0.65Ba0.35ZrO3 (PBZ) thin films have been grown on MgO (001) substrates by pulsed-laser deposition (PLD). We have compared the structural and dielectric properties of PBZ films grown at various temperatures. A highly c-axis oriented PBZ film has been grown on a MgO (001) substrate at the deposition temperature of 550°C and has also shown the largest tunability among all the PBZ films in capacitance-voltage measurements. The tunability and dielectric loss of the PBZ film was 20% and 0.00959, respectively. In addition, we have compared the temperature coefficient of capacitance (TCC) of a PBZ film with that of a Ba0.5Sr 0.5TiO3 (BST) film which is a well-known material applicable to tunable microwave devices. We have confirmed that TCC value of a PBZ thin film was three-times smaller than that of a BST thin film.

AB - Pb0.65Ba0.35ZrO3 (PBZ) thin films have been grown on MgO (001) substrates by pulsed-laser deposition (PLD). We have compared the structural and dielectric properties of PBZ films grown at various temperatures. A highly c-axis oriented PBZ film has been grown on a MgO (001) substrate at the deposition temperature of 550°C and has also shown the largest tunability among all the PBZ films in capacitance-voltage measurements. The tunability and dielectric loss of the PBZ film was 20% and 0.00959, respectively. In addition, we have compared the temperature coefficient of capacitance (TCC) of a PBZ film with that of a Ba0.5Sr 0.5TiO3 (BST) film which is a well-known material applicable to tunable microwave devices. We have confirmed that TCC value of a PBZ thin film was three-times smaller than that of a BST thin film.

KW - BST

KW - Microwave tunable device

KW - PBZ

KW - Pulsed laser deposition

KW - TCC

KW - Tunability

UR - https://www.scopus.com/pages/publications/33751168065

U2 - 10.1080/10584580490895112

DO - 10.1080/10584580490895112

M3 - Article

AN - SCOPUS:33751168065

SN - 1058-4587

VL - 66

SP - 205

EP - 211

JO - Integrated Ferroelectrics

JF - Integrated Ferroelectrics

ER -

The dielectric properties of Pb_0.65Ba_0.35ZrO ₃ thin films applicable to microwave tunable devices

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Keywords

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