The degradation of characteristic in DRAM by ILD HDP process condition

Jihoon Kim; Byungduk Choi

doi:10.1149/09803.0159ecst

The degradation of characteristic in DRAM by ILD HDP process condition

Jihoon Kim
, Byungduk Choi

Department of Electronic and Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

Due to the shrink following the innovative development of DRAM devices, products below 20nm are currently being developed. Reduction of capacitor leakage current and NBTI characteristic are important interests in development process. However, the deterioration of characteristics according to subsequent processes is confirmed without any cell structure or material changes. We studied the characteristics of DRAM devices according to the hydrogen concentration spreading from HDP CVD used as ILD. Due to hydrogen concentration increased capacitor leakage current and deterioration of NBTI characteristics were identified. Through this result, we can propose HDP CVD oxide process conditions in product development considering each characteristic.

Original language	English
Title of host publication	PRiME 2020
Subtitle of host publication	Semiconductors, Dielectrics, and Metals for Nanoelectronics and Plasma Nanosciences
Editors	D. Misra, S. De Gendt, K. Kita, K. Kakushima, P. Mascher, U. Cvelbar, F. Roozeboom, G. W. Hunter, L. J. Li, C. O'Dwyer
Publisher	IOP Publishing Ltd.
Pages	159-162
Number of pages	4
Edition	3
ISBN (Electronic)	9781607688983
DOIs	https://doi.org/10.1149/09803.0159ecst
State	Published - 2020
Event	Pacific Rim Meeting on Electrochemical and Solid State Science 2020, PRiME 200 - Honolulu, United States Duration: 4 Oct 2020 → 9 Oct 2020

Publication series

Name	ECS Transactions
Number	3
Volume	98
ISSN (Print)	1938-6737
ISSN (Electronic)	1938-5862

Conference

Conference	Pacific Rim Meeting on Electrochemical and Solid State Science 2020, PRiME 200
Country/Territory	United States
City	Honolulu
Period	4/10/20 → 9/10/20

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10.1149/09803.0159ecst

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Kim, J., & Choi, B. (2020). The degradation of characteristic in DRAM by ILD HDP process condition. In D. Misra, S. De Gendt, K. Kita, K. Kakushima, P. Mascher, U. Cvelbar, F. Roozeboom, G. W. Hunter, L. J. Li, & C. O'Dwyer (Eds.), PRiME 2020: Semiconductors, Dielectrics, and Metals for Nanoelectronics and Plasma Nanosciences (3 ed., pp. 159-162). (ECS Transactions; Vol. 98, No. 3). IOP Publishing Ltd.. https://doi.org/10.1149/09803.0159ecst

Kim, Jihoon ; Choi, Byungduk. / The degradation of characteristic in DRAM by ILD HDP process condition. PRiME 2020: Semiconductors, Dielectrics, and Metals for Nanoelectronics and Plasma Nanosciences. editor / D. Misra ; S. De Gendt ; K. Kita ; K. Kakushima ; P. Mascher ; U. Cvelbar ; F. Roozeboom ; G. W. Hunter ; L. J. Li ; C. O'Dwyer. 3. ed. IOP Publishing Ltd., 2020. pp. 159-162 (ECS Transactions; 3).

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title = "The degradation of characteristic in DRAM by ILD HDP process condition",

abstract = "Due to the shrink following the innovative development of DRAM devices, products below 20nm are currently being developed. Reduction of capacitor leakage current and NBTI characteristic are important interests in development process. However, the deterioration of characteristics according to subsequent processes is confirmed without any cell structure or material changes. We studied the characteristics of DRAM devices according to the hydrogen concentration spreading from HDP CVD used as ILD. Due to hydrogen concentration increased capacitor leakage current and deterioration of NBTI characteristics were identified. Through this result, we can propose HDP CVD oxide process conditions in product development considering each characteristic.",

author = "Jihoon Kim and Byungduk Choi",

note = "Publisher Copyright: {\textcopyright} The Electrochemical Society; Pacific Rim Meeting on Electrochemical and Solid State Science 2020, PRiME 200 ; Conference date: 04-10-2020 Through 09-10-2020",

year = "2020",

doi = "10.1149/09803.0159ecst",

language = "English",

series = "ECS Transactions",

publisher = "IOP Publishing Ltd.",

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Kim, J & Choi, B 2020, The degradation of characteristic in DRAM by ILD HDP process condition. in D Misra, S De Gendt, K Kita, K Kakushima, P Mascher, U Cvelbar, F Roozeboom, GW Hunter, LJ Li & C O'Dwyer (eds), PRiME 2020: Semiconductors, Dielectrics, and Metals for Nanoelectronics and Plasma Nanosciences. 3 edn, ECS Transactions, no. 3, vol. 98, IOP Publishing Ltd., pp. 159-162, Pacific Rim Meeting on Electrochemical and Solid State Science 2020, PRiME 200, Honolulu, United States, 4/10/20. https://doi.org/10.1149/09803.0159ecst

The degradation of characteristic in DRAM by ILD HDP process condition. / Kim, Jihoon; Choi, Byungduk.
PRiME 2020: Semiconductors, Dielectrics, and Metals for Nanoelectronics and Plasma Nanosciences. ed. / D. Misra; S. De Gendt; K. Kita; K. Kakushima; P. Mascher; U. Cvelbar; F. Roozeboom; G. W. Hunter; L. J. Li; C. O'Dwyer. 3. ed. IOP Publishing Ltd., 2020. p. 159-162 (ECS Transactions; Vol. 98, No. 3).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Kim, Jihoon

AU - Choi, Byungduk

N1 - Publisher Copyright: © The Electrochemical Society

PY - 2020

Y1 - 2020

N2 - Due to the shrink following the innovative development of DRAM devices, products below 20nm are currently being developed. Reduction of capacitor leakage current and NBTI characteristic are important interests in development process. However, the deterioration of characteristics according to subsequent processes is confirmed without any cell structure or material changes. We studied the characteristics of DRAM devices according to the hydrogen concentration spreading from HDP CVD used as ILD. Due to hydrogen concentration increased capacitor leakage current and deterioration of NBTI characteristics were identified. Through this result, we can propose HDP CVD oxide process conditions in product development considering each characteristic.

AB - Due to the shrink following the innovative development of DRAM devices, products below 20nm are currently being developed. Reduction of capacitor leakage current and NBTI characteristic are important interests in development process. However, the deterioration of characteristics according to subsequent processes is confirmed without any cell structure or material changes. We studied the characteristics of DRAM devices according to the hydrogen concentration spreading from HDP CVD used as ILD. Due to hydrogen concentration increased capacitor leakage current and deterioration of NBTI characteristics were identified. Through this result, we can propose HDP CVD oxide process conditions in product development considering each characteristic.

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Kim J, Choi B. The degradation of characteristic in DRAM by ILD HDP process condition. In Misra D, De Gendt S, Kita K, Kakushima K, Mascher P, Cvelbar U, Roozeboom F, Hunter GW, Li LJ, O'Dwyer C, editors, PRiME 2020: Semiconductors, Dielectrics, and Metals for Nanoelectronics and Plasma Nanosciences. 3 ed. IOP Publishing Ltd. 2020. p. 159-162. (ECS Transactions; 3). doi: 10.1149/09803.0159ecst

The degradation of characteristic in DRAM by ILD HDP process condition

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