Terahertz quantum cascaded laser based on LO-phonon scattering using GaAs/AlxGa1-xAs (x=0.15) material system

  • Sanjeev Kumar
  • , Gil Ho Kim
  • , Doo Hyeb Youn
  • , Kwang Yong Kang

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

In the present work, THz QCL structures following LO-phonon depopulation are simulated for the different thickness of active/injector (module) region. The simulation was carried out using the GaAs/AlxGa1-xAs material with x=0.15. Self consistent conduction band profiles of QCL were obtained by solving the 1D Schrödinger equations under different bias. The simulations were performed with changing the thickness of the module by maintaining depopulation with LO phonon scattering. Simulation results reveal that such QCL structures with different thickness (of active/injector region) could be operated in 3-4 THz range with reasonable oscillator strength.

Original languageEnglish
Title of host publicationPhysics of Semiconductors - 29th International Conference, ICPS 29
Pages219-220
Number of pages2
DOIs
StatePublished - 2009
Externally publishedYes
Event29th International Conference on Physics of Semiconductors, ICPS 29 - Rio de Janeiro, Brazil
Duration: 27 Jul 20081 Aug 2008

Publication series

NameAIP Conference Proceedings
Volume1199
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Conference

Conference29th International Conference on Physics of Semiconductors, ICPS 29
Country/TerritoryBrazil
CityRio de Janeiro
Period27/07/081/08/08

Keywords

  • LO-phonon scattering
  • Quantum cascaded lasers
  • THz

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