Abstract
Zinc oxide (ZnO) and tin oxide (SnO2) are widely used in gas sensors and photocatalysis owing to their wide bandgaps, high electron mobilities, and thermal stabilities. Herein, a hollow structure of SnO2 is synthesized without a template by varying the precursor concentration and synthesis time, and its growth mechanism is studied. In addition, a core-shell structure fabricated with SnO2 and ZnO, which is the heterostructure formed between the two metal oxides, is synthesized to compensate for the inferior properties of SnO2.
| Original language | English |
|---|---|
| Article number | 1900996 |
| Journal | Physica Status Solidi (A) Applications and Materials Science |
| Volume | 217 |
| Issue number | 12 |
| DOIs | |
| State | Published - 1 Jun 2020 |
Keywords
- metal oxide
- semiconductor
- specific surface area
- tin oxide
- zinc oxide