Temperature of a semiconducting substrate exposed to an inductively coupled plasma

The temperature of a semiconducting Si substrate surface exposed to an Ar plasma was monitored in-situ by using a homemade thermocouple system at inductively coupled plasma (ICP) powers ranging from 300 to 600 W. The temperature of the Si substrate was also simulated by using computational fluid dynamics (CFD). The substrate surface temperature was analyzed experimentally and theoretically as a function of ICP power and time. In addition, a simulation of the temperature distribution as a function of ICP power and location was performed by using CFD for cross sections of the Si substrate and the electrode chuck underneath.