Temperature Measurement Method Using FET Type Gas Sensor

Chayoung Lee; Gyuweon Jung; Wonjun Shin; Yujeong Jeong; Jinwoo Park; Donghee Kim; Jae Joon Kim; Jong Ho Lee

doi:10.1109/EDTM55494.2023.10102965

Temperature Measurement Method Using FET Type Gas Sensor

Chayoung Lee, Gyuweon Jung, Wonjun Shin, Yujeong Jeong, Jinwoo Park, Donghee Kim, Jae Joon Kim, Jong Ho Lee

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

In this work, we propose the method about temperature measurement using transient behaviors of FET-type gas sensors based on MOSFET. The proposed sensor was manufactured using the CMOS process, and has a floating gate, p-type buried channel, control-gate, and WO3. Through appropriate pulse time and bias control, it was possible to confirm the response more than 5 times according to the temperature change from 25°C to 45°C.

Original language	English
Title of host publication	7th IEEE Electron Devices Technology and Manufacturing Conference
Subtitle of host publication	Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9798350332520
DOIs	https://doi.org/10.1109/EDTM55494.2023.10102965
State	Published - 2023
Externally published	Yes
Event	7th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2023 - Seoul, Korea, Republic of Duration: 7 Mar 2023 → 10 Mar 2023

Publication series

Name	7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023

Conference

Conference	7th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2023
Country/Territory	Korea, Republic of
City	Seoul
Period	7/03/23 → 10/03/23

Keywords

CMOS process
FET type gas sensor
MOSFET
Temperature measurement

Access to Document

10.1109/EDTM55494.2023.10102965

Cite this

Lee, C., Jung, G., Shin, W., Jeong, Y., Park, J., Kim, D., Kim, J. J., & Lee, J. H. (2023). Temperature Measurement Method Using FET Type Gas Sensor. In 7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023 (7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EDTM55494.2023.10102965

Lee, Chayoung ; Jung, Gyuweon ; Shin, Wonjun et al. / Temperature Measurement Method Using FET Type Gas Sensor. 7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023. Institute of Electrical and Electronics Engineers Inc., 2023. (7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023).

@inproceedings{870a4702cf1d4875a4c3822a5380430e,

title = "Temperature Measurement Method Using FET Type Gas Sensor",

abstract = "In this work, we propose the method about temperature measurement using transient behaviors of FET-type gas sensors based on MOSFET. The proposed sensor was manufactured using the CMOS process, and has a floating gate, p-type buried channel, control-gate, and WO3. Through appropriate pulse time and bias control, it was possible to confirm the response more than 5 times according to the temperature change from 25°C to 45°C.",

keywords = "CMOS process, FET type gas sensor, MOSFET, Temperature measurement",

author = "Chayoung Lee and Gyuweon Jung and Wonjun Shin and Yujeong Jeong and Jinwoo Park and Donghee Kim and Kim, \{Jae Joon\} and Lee, \{Jong Ho\}",

note = "Publisher Copyright: {\textcopyright} 2023 IEEE.; 7th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2023 ; Conference date: 07-03-2023 Through 10-03-2023",

year = "2023",

doi = "10.1109/EDTM55494.2023.10102965",

language = "English",

series = "7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "7th IEEE Electron Devices Technology and Manufacturing Conference",

}

Lee, C, Jung, G, Shin, W, Jeong, Y, Park, J, Kim, D, Kim, JJ & Lee, JH 2023, Temperature Measurement Method Using FET Type Gas Sensor. in 7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023. 7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023, Institute of Electrical and Electronics Engineers Inc., 7th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2023, Seoul, Korea, Republic of, 7/03/23. https://doi.org/10.1109/EDTM55494.2023.10102965

Temperature Measurement Method Using FET Type Gas Sensor. / Lee, Chayoung; Jung, Gyuweon; Shin, Wonjun et al.
7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023. Institute of Electrical and Electronics Engineers Inc., 2023. (7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Temperature Measurement Method Using FET Type Gas Sensor

AU - Lee, Chayoung

AU - Jung, Gyuweon

AU - Shin, Wonjun

AU - Jeong, Yujeong

AU - Park, Jinwoo

AU - Kim, Donghee

AU - Kim, Jae Joon

AU - Lee, Jong Ho

PY - 2023

Y1 - 2023

N2 - In this work, we propose the method about temperature measurement using transient behaviors of FET-type gas sensors based on MOSFET. The proposed sensor was manufactured using the CMOS process, and has a floating gate, p-type buried channel, control-gate, and WO3. Through appropriate pulse time and bias control, it was possible to confirm the response more than 5 times according to the temperature change from 25°C to 45°C.

AB - In this work, we propose the method about temperature measurement using transient behaviors of FET-type gas sensors based on MOSFET. The proposed sensor was manufactured using the CMOS process, and has a floating gate, p-type buried channel, control-gate, and WO3. Through appropriate pulse time and bias control, it was possible to confirm the response more than 5 times according to the temperature change from 25°C to 45°C.

KW - CMOS process

KW - FET type gas sensor

KW - MOSFET

KW - Temperature measurement

UR - https://www.scopus.com/pages/publications/85158160742

U2 - 10.1109/EDTM55494.2023.10102965

DO - 10.1109/EDTM55494.2023.10102965

M3 - Conference contribution

AN - SCOPUS:85158160742

T3 - 7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023

BT - 7th IEEE Electron Devices Technology and Manufacturing Conference

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 7th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2023

Y2 - 7 March 2023 through 10 March 2023

ER -

Lee C, Jung G, Shin W, Jeong Y, Park J, Kim D et al. Temperature Measurement Method Using FET Type Gas Sensor. In 7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023. Institute of Electrical and Electronics Engineers Inc. 2023. (7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023). doi: 10.1109/EDTM55494.2023.10102965

Temperature Measurement Method Using FET Type Gas Sensor

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