Temperature-dependent electrical characteristics of c-Si and CIGS solar cells

Pyung Ho Choi; Do Hyun Baek; Hyoung Sun Park; Sang Sub Kim; Jun Sin Yi; Sang Soo Kim; Byoung Deog Choi

doi:10.1166/jnn.2014.10145

Temperature-dependent electrical characteristics of c-Si and CIGS solar cells

Pyung Ho Choi, Do Hyun Baek, Hyoung Sun Park, Sang Sub Kim, Jun Sin Yi, Sang Soo Kim, Byoung Deog Choi

Department of Electronic and Electrical Engineering

Sungkyunkwan University

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

We characterized the electrical behavior of crystalline silicon (c-Si) and Cu(In_1-xGa_x)Se₂ (CIGS) solar cells by current-voltage (I-V) and capacitance-voltage (C-V) methods. We investigated the temperature-dependent carrier transport mechanism by determining the parameters of ideality factor (n) and activation energy (E_a) deduced from I-V measurements. CIGS solar cells, as a function of temperature, showed drastic changes in n and E_a in the space charge region (SCR) that forms near the ZnS/CIGS interface. Furthermore, by using a C-V measured substrate doping profiling method, we confirmed that the CIGS absorption layer had a graded band-gap structure from the end point of the SCR to the CIGS/Mo back contacts, while c-Si solar cells had a uniformly doped carrier concentration.

Original language	English
Pages (from-to)	9206-9209
Number of pages	4
Journal	Journal of Nanoscience and Nanotechnology
Volume	14
Issue number	12
DOIs	https://doi.org/10.1166/jnn.2014.10145
State	Published - 1 Dec 2014

Keywords

C-Si Solar Cell
C-V
CIGS
Electrical Characterization
I-V

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1166/jnn.2014.10145

Cite this

@article{91ffc886116a449a976fbb3c59f61dce,

title = "Temperature-dependent electrical characteristics of c-Si and CIGS solar cells",

abstract = "We characterized the electrical behavior of crystalline silicon (c-Si) and Cu(In1-xGax)Se2 (CIGS) solar cells by current-voltage (I-V) and capacitance-voltage (C-V) methods. We investigated the temperature-dependent carrier transport mechanism by determining the parameters of ideality factor (n) and activation energy (Ea) deduced from I-V measurements. CIGS solar cells, as a function of temperature, showed drastic changes in n and Ea in the space charge region (SCR) that forms near the ZnS/CIGS interface. Furthermore, by using a C-V measured substrate doping profiling method, we confirmed that the CIGS absorption layer had a graded band-gap structure from the end point of the SCR to the CIGS/Mo back contacts, while c-Si solar cells had a uniformly doped carrier concentration.",

keywords = "C-Si Solar Cell, C-V, CIGS, Electrical Characterization, I-V",

author = "Choi, \{Pyung Ho\} and Baek, \{Do Hyun\} and Park, \{Hyoung Sun\} and Kim, \{Sang Sub\} and Yi, \{Jun Sin\} and Kim, \{Sang Soo\} and Choi, \{Byoung Deog\}",

note = "Publisher Copyright: {\textcopyright} 2014 American Scientific Publishers.",

year = "2014",

month = dec,

day = "1",

doi = "10.1166/jnn.2014.10145",

language = "English",

volume = "14",

pages = "9206--9209",

journal = "Journal of Nanoscience and Nanotechnology",

issn = "1533-4880",

publisher = "American Scientific Publishers",

number = "12",

}

TY - JOUR

T1 - Temperature-dependent electrical characteristics of c-Si and CIGS solar cells

AU - Choi, Pyung Ho

AU - Baek, Do Hyun

AU - Park, Hyoung Sun

AU - Kim, Sang Sub

AU - Yi, Jun Sin

AU - Kim, Sang Soo

AU - Choi, Byoung Deog

PY - 2014/12/1

Y1 - 2014/12/1

N2 - We characterized the electrical behavior of crystalline silicon (c-Si) and Cu(In1-xGax)Se2 (CIGS) solar cells by current-voltage (I-V) and capacitance-voltage (C-V) methods. We investigated the temperature-dependent carrier transport mechanism by determining the parameters of ideality factor (n) and activation energy (Ea) deduced from I-V measurements. CIGS solar cells, as a function of temperature, showed drastic changes in n and Ea in the space charge region (SCR) that forms near the ZnS/CIGS interface. Furthermore, by using a C-V measured substrate doping profiling method, we confirmed that the CIGS absorption layer had a graded band-gap structure from the end point of the SCR to the CIGS/Mo back contacts, while c-Si solar cells had a uniformly doped carrier concentration.

AB - We characterized the electrical behavior of crystalline silicon (c-Si) and Cu(In1-xGax)Se2 (CIGS) solar cells by current-voltage (I-V) and capacitance-voltage (C-V) methods. We investigated the temperature-dependent carrier transport mechanism by determining the parameters of ideality factor (n) and activation energy (Ea) deduced from I-V measurements. CIGS solar cells, as a function of temperature, showed drastic changes in n and Ea in the space charge region (SCR) that forms near the ZnS/CIGS interface. Furthermore, by using a C-V measured substrate doping profiling method, we confirmed that the CIGS absorption layer had a graded band-gap structure from the end point of the SCR to the CIGS/Mo back contacts, while c-Si solar cells had a uniformly doped carrier concentration.

KW - C-Si Solar Cell

KW - C-V

KW - CIGS

KW - Electrical Characterization

KW - I-V

UR - https://www.scopus.com/pages/publications/84911441033

U2 - 10.1166/jnn.2014.10145

DO - 10.1166/jnn.2014.10145

M3 - Article

AN - SCOPUS:84911441033

SN - 1533-4880

VL - 14

SP - 9206

EP - 9209

JO - Journal of Nanoscience and Nanotechnology

JF - Journal of Nanoscience and Nanotechnology

IS - 12

ER -

Temperature-dependent electrical characteristics of c-Si and CIGS solar cells

Abstract

Keywords

UN SDGs

Access to Document

Other files and links

Fingerprint

Cite this