Temperature-dependent electrical characteristics of c-Si and CIGS solar cells

Pyung Ho Choi; Do Hyun Baek; Hyoung Sun Park; Sang Sub Kim; Jun Sin Yi; Sang Soo Kim; Byoung Deog Choi

doi:10.1166/jnn.2014.10145

Temperature-dependent electrical characteristics of c-Si and CIGS solar cells

Pyung Ho Choi
, Do Hyun Baek
, Hyoung Sun Park
, Sang Sub Kim
, Jun Sin Yi
, Sang Soo Kim
, Byoung Deog Choi

Department of Electronic and Electrical Engineering

Sungkyunkwan University

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

We characterized the electrical behavior of crystalline silicon (c-Si) and Cu(In_1-xGa_x)Se₂ (CIGS) solar cells by current-voltage (I-V) and capacitance-voltage (C-V) methods. We investigated the temperature-dependent carrier transport mechanism by determining the parameters of ideality factor (n) and activation energy (E_a) deduced from I-V measurements. CIGS solar cells, as a function of temperature, showed drastic changes in n and E_a in the space charge region (SCR) that forms near the ZnS/CIGS interface. Furthermore, by using a C-V measured substrate doping profiling method, we confirmed that the CIGS absorption layer had a graded band-gap structure from the end point of the SCR to the CIGS/Mo back contacts, while c-Si solar cells had a uniformly doped carrier concentration.

Original language	English
Pages (from-to)	9206-9209
Number of pages	4
Journal	Journal of Nanoscience and Nanotechnology
Volume	14
Issue number	12
DOIs	https://doi.org/10.1166/jnn.2014.10145
State	Published - 1 Dec 2014

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Keywords

C-Si Solar Cell
C-V
CIGS
Electrical Characterization
I-V

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10.1166/jnn.2014.10145

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title = "Temperature-dependent electrical characteristics of c-Si and CIGS solar cells",

abstract = "We characterized the electrical behavior of crystalline silicon (c-Si) and Cu(In1-xGax)Se2 (CIGS) solar cells by current-voltage (I-V) and capacitance-voltage (C-V) methods. We investigated the temperature-dependent carrier transport mechanism by determining the parameters of ideality factor (n) and activation energy (Ea) deduced from I-V measurements. CIGS solar cells, as a function of temperature, showed drastic changes in n and Ea in the space charge region (SCR) that forms near the ZnS/CIGS interface. Furthermore, by using a C-V measured substrate doping profiling method, we confirmed that the CIGS absorption layer had a graded band-gap structure from the end point of the SCR to the CIGS/Mo back contacts, while c-Si solar cells had a uniformly doped carrier concentration.",

keywords = "C-Si Solar Cell, C-V, CIGS, Electrical Characterization, I-V",

author = "Choi, \{Pyung Ho\} and Baek, \{Do Hyun\} and Park, \{Hyoung Sun\} and Kim, \{Sang Sub\} and Yi, \{Jun Sin\} and Kim, \{Sang Soo\} and Choi, \{Byoung Deog\}",

note = "Publisher Copyright: {\textcopyright} 2014 American Scientific Publishers.",

year = "2014",

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doi = "10.1166/jnn.2014.10145",

language = "English",

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journal = "Journal of Nanoscience and Nanotechnology",

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T1 - Temperature-dependent electrical characteristics of c-Si and CIGS solar cells

AU - Choi, Pyung Ho

AU - Baek, Do Hyun

AU - Park, Hyoung Sun

AU - Kim, Sang Sub

AU - Yi, Jun Sin

AU - Kim, Sang Soo

AU - Choi, Byoung Deog

PY - 2014/12/1

Y1 - 2014/12/1

N2 - We characterized the electrical behavior of crystalline silicon (c-Si) and Cu(In1-xGax)Se2 (CIGS) solar cells by current-voltage (I-V) and capacitance-voltage (C-V) methods. We investigated the temperature-dependent carrier transport mechanism by determining the parameters of ideality factor (n) and activation energy (Ea) deduced from I-V measurements. CIGS solar cells, as a function of temperature, showed drastic changes in n and Ea in the space charge region (SCR) that forms near the ZnS/CIGS interface. Furthermore, by using a C-V measured substrate doping profiling method, we confirmed that the CIGS absorption layer had a graded band-gap structure from the end point of the SCR to the CIGS/Mo back contacts, while c-Si solar cells had a uniformly doped carrier concentration.

AB - We characterized the electrical behavior of crystalline silicon (c-Si) and Cu(In1-xGax)Se2 (CIGS) solar cells by current-voltage (I-V) and capacitance-voltage (C-V) methods. We investigated the temperature-dependent carrier transport mechanism by determining the parameters of ideality factor (n) and activation energy (Ea) deduced from I-V measurements. CIGS solar cells, as a function of temperature, showed drastic changes in n and Ea in the space charge region (SCR) that forms near the ZnS/CIGS interface. Furthermore, by using a C-V measured substrate doping profiling method, we confirmed that the CIGS absorption layer had a graded band-gap structure from the end point of the SCR to the CIGS/Mo back contacts, while c-Si solar cells had a uniformly doped carrier concentration.

KW - C-Si Solar Cell

KW - C-V

KW - CIGS

KW - Electrical Characterization

KW - I-V

UR - https://www.scopus.com/pages/publications/84911441033

U2 - 10.1166/jnn.2014.10145

DO - 10.1166/jnn.2014.10145

M3 - Article

AN - SCOPUS:84911441033

SN - 1533-4880

VL - 14

SP - 9206

EP - 9209

JO - Journal of Nanoscience and Nanotechnology

JF - Journal of Nanoscience and Nanotechnology

IS - 12

ER -

Temperature-dependent electrical characteristics of c-Si and CIGS solar cells

Abstract

UN SDGs

Keywords

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