Temperature dependence of ZnO thin films grown on Si substrate

Y. Y. Kim; C. H. Ahn; S. W. Kang; B. H. Kong; S. K. Mohanta; H. K. Cho; J. Y. Lee; H. S. Kim

doi:10.1007/s10854-007-9402-6

Temperature dependence of ZnO thin films grown on Si substrate

Y. Y. Kim
, C. H. Ahn
, S. W. Kang
, B. H. Kong
, S. K. Mohanta
, H. K. Cho
, J. Y. Lee
, H. S. Kim

Department of Advanced Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

The structural and optical properties of ZnO thin films grown on Si substrates were investigated for different growth temperatures in the range of 520-720 °C. X-ray diffraction investigations revealed the preferred c-axis oriented growth of ZnO thin films, which was further confirmed by the presence of ZnO (0002) diffraction spots with arc shape. The increase in growth temperature transformed surface morphology from pyramidal with columnar grains to relatively flat surface with increased grain size. In addition, the increased growth temperature caused redshift and intensity enhancement of band-edge emission of the ZnO, which were related to the increase in tensile strain and the grain size, respectively.

Original language	English
Pages (from-to)	749-754
Number of pages	6
Journal	Journal of Materials Science: Materials in Electronics
Volume	19
Issue number	8-9
DOIs	https://doi.org/10.1007/s10854-007-9402-6
State	Published - Sep 2008

Access to Document

10.1007/s10854-007-9402-6

Cite this

@article{cab3f04414304bce824b41352ceef65f,

title = "Temperature dependence of ZnO thin films grown on Si substrate",

abstract = "The structural and optical properties of ZnO thin films grown on Si substrates were investigated for different growth temperatures in the range of 520-720 °C. X-ray diffraction investigations revealed the preferred c-axis oriented growth of ZnO thin films, which was further confirmed by the presence of ZnO (0002) diffraction spots with arc shape. The increase in growth temperature transformed surface morphology from pyramidal with columnar grains to relatively flat surface with increased grain size. In addition, the increased growth temperature caused redshift and intensity enhancement of band-edge emission of the ZnO, which were related to the increase in tensile strain and the grain size, respectively.",

author = "Kim, \{Y. Y.\} and Ahn, \{C. H.\} and Kang, \{S. W.\} and Kong, \{B. H.\} and Mohanta, \{S. K.\} and Cho, \{H. K.\} and Lee, \{J. Y.\} and Kim, \{H. S.\}",

year = "2008",

month = sep,

doi = "10.1007/s10854-007-9402-6",

language = "English",

volume = "19",

pages = "749--754",

journal = "Journal of Materials Science: Materials in Electronics",

issn = "0957-4522",

publisher = "Springer New York",

number = "8-9",

}

TY - JOUR

T1 - Temperature dependence of ZnO thin films grown on Si substrate

AU - Kim, Y. Y.

AU - Ahn, C. H.

AU - Kang, S. W.

AU - Kong, B. H.

AU - Mohanta, S. K.

AU - Cho, H. K.

AU - Lee, J. Y.

AU - Kim, H. S.

PY - 2008/9

Y1 - 2008/9

N2 - The structural and optical properties of ZnO thin films grown on Si substrates were investigated for different growth temperatures in the range of 520-720 °C. X-ray diffraction investigations revealed the preferred c-axis oriented growth of ZnO thin films, which was further confirmed by the presence of ZnO (0002) diffraction spots with arc shape. The increase in growth temperature transformed surface morphology from pyramidal with columnar grains to relatively flat surface with increased grain size. In addition, the increased growth temperature caused redshift and intensity enhancement of band-edge emission of the ZnO, which were related to the increase in tensile strain and the grain size, respectively.

AB - The structural and optical properties of ZnO thin films grown on Si substrates were investigated for different growth temperatures in the range of 520-720 °C. X-ray diffraction investigations revealed the preferred c-axis oriented growth of ZnO thin films, which was further confirmed by the presence of ZnO (0002) diffraction spots with arc shape. The increase in growth temperature transformed surface morphology from pyramidal with columnar grains to relatively flat surface with increased grain size. In addition, the increased growth temperature caused redshift and intensity enhancement of band-edge emission of the ZnO, which were related to the increase in tensile strain and the grain size, respectively.

UR - https://www.scopus.com/pages/publications/44149103874

U2 - 10.1007/s10854-007-9402-6

DO - 10.1007/s10854-007-9402-6

M3 - Article

AN - SCOPUS:44149103874

SN - 0957-4522

VL - 19

SP - 749

EP - 754

JO - Journal of Materials Science: Materials in Electronics

JF - Journal of Materials Science: Materials in Electronics

IS - 8-9

ER -

Temperature dependence of ZnO thin films grown on Si substrate

Abstract

Access to Document

Other files and links

Fingerprint

Cite this