Technology projection using simple compact models

H. S.Philip Wong; Lan Wei; Saeroonter Oh; Albert Lin; Jie Deng; Soogine Chong; Kerem Akarvardar

doi:10.1109/SISPAD.2009.5290261

Technology projection using simple compact models

H. S.Philip Wong
, Lan Wei
, Saeroonter Oh
, Albert Lin
, Jie Deng
, Soogine Chong
, Kerem Akarvardar

Stanford University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

5 Scopus citations

Abstract

We review recent efforts to capture the device non-idealities for circuit-level technology projection for Si CMOS. We also give some examples of simple compact model development for assessing the circuit-level performance of exploratory devices such as III-V FET, carbon nanotube transistor, and nanoelectromechanical (NEM) transistors and relays.

Original language	English
Title of host publication	SISPAD 2009 - 2009 International Conference on Simulation of Semiconductor Processes and Devices
DOIs	https://doi.org/10.1109/SISPAD.2009.5290261
State	Published - 2009
Externally published	Yes
Event	SISPAD 2009 - 2009 International Conference on Simulation of Semiconductor Processes and Devices - San Diego, CA, United States Duration: 9 Sep 2009 → 11 Sep 2009

Publication series

Name	International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Conference

Conference	SISPAD 2009 - 2009 International Conference on Simulation of Semiconductor Processes and Devices
Country/Territory	United States
City	San Diego, CA
Period	9/09/09 → 11/09/09

Keywords

Carbon nanotube transistor
CNT
Compact model
III-V FET
Nanoelectromechanical relay
NEMS
Parasitic capacitance
Parasitic resistance
Si CMOS
Technology projection

Access to Document

10.1109/SISPAD.2009.5290261

Cite this

Wong, H. S. P., Wei, L., Oh, S., Lin, A., Deng, J., Chong, S., & Akarvardar, K. (2009). Technology projection using simple compact models. In SISPAD 2009 - 2009 International Conference on Simulation of Semiconductor Processes and Devices Article 5290261 (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD). https://doi.org/10.1109/SISPAD.2009.5290261

@inproceedings{d62cc9292f244e83bcadd9cc00551a81,

title = "Technology projection using simple compact models",

abstract = "We review recent efforts to capture the device non-idealities for circuit-level technology projection for Si CMOS. We also give some examples of simple compact model development for assessing the circuit-level performance of exploratory devices such as III-V FET, carbon nanotube transistor, and nanoelectromechanical (NEM) transistors and relays.",

keywords = "Carbon nanotube transistor, CNT, Compact model, III-V FET, Nanoelectromechanical relay, NEMS, Parasitic capacitance, Parasitic resistance, Si CMOS, Technology projection",

author = "Wong, \{H. S.Philip\} and Lan Wei and Saeroonter Oh and Albert Lin and Jie Deng and Soogine Chong and Kerem Akarvardar",

year = "2009",

doi = "10.1109/SISPAD.2009.5290261",

language = "English",

isbn = "9781424439492",

series = "International Conference on Simulation of Semiconductor Processes and Devices, SISPAD",

booktitle = "SISPAD 2009 - 2009 International Conference on Simulation of Semiconductor Processes and Devices",

note = "SISPAD 2009 - 2009 International Conference on Simulation of Semiconductor Processes and Devices ; Conference date: 09-09-2009 Through 11-09-2009",

}

Wong, HSP, Wei, L, Oh, S, Lin, A, Deng, J, Chong, S & Akarvardar, K 2009, Technology projection using simple compact models. in SISPAD 2009 - 2009 International Conference on Simulation of Semiconductor Processes and Devices., 5290261, International Conference on Simulation of Semiconductor Processes and Devices, SISPAD, SISPAD 2009 - 2009 International Conference on Simulation of Semiconductor Processes and Devices, San Diego, CA, United States, 9/09/09. https://doi.org/10.1109/SISPAD.2009.5290261

Technology projection using simple compact models. / Wong, H. S.Philip; Wei, Lan; Oh, Saeroonter et al.
SISPAD 2009 - 2009 International Conference on Simulation of Semiconductor Processes and Devices. 2009. 5290261 (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Technology projection using simple compact models

AU - Wong, H. S.Philip

AU - Wei, Lan

AU - Oh, Saeroonter

AU - Lin, Albert

AU - Deng, Jie

AU - Chong, Soogine

AU - Akarvardar, Kerem

PY - 2009

Y1 - 2009

N2 - We review recent efforts to capture the device non-idealities for circuit-level technology projection for Si CMOS. We also give some examples of simple compact model development for assessing the circuit-level performance of exploratory devices such as III-V FET, carbon nanotube transistor, and nanoelectromechanical (NEM) transistors and relays.

AB - We review recent efforts to capture the device non-idealities for circuit-level technology projection for Si CMOS. We also give some examples of simple compact model development for assessing the circuit-level performance of exploratory devices such as III-V FET, carbon nanotube transistor, and nanoelectromechanical (NEM) transistors and relays.

KW - Carbon nanotube transistor

KW - CNT

KW - Compact model

KW - III-V FET

KW - Nanoelectromechanical relay

KW - NEMS

KW - Parasitic capacitance

KW - Parasitic resistance

KW - Si CMOS

KW - Technology projection

UR - https://www.scopus.com/pages/publications/74349109761

U2 - 10.1109/SISPAD.2009.5290261

DO - 10.1109/SISPAD.2009.5290261

M3 - Conference contribution

AN - SCOPUS:74349109761

SN - 9781424439492

T3 - International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

BT - SISPAD 2009 - 2009 International Conference on Simulation of Semiconductor Processes and Devices

T2 - SISPAD 2009 - 2009 International Conference on Simulation of Semiconductor Processes and Devices

Y2 - 9 September 2009 through 11 September 2009

ER -

Technology projection using simple compact models

Abstract

Publication series

Conference

Keywords

Access to Document

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