Systematic Modeling and Optimization for High-Efficiency Interdigitated Back-Contact Crystalline Silicon Solar Cells

This study utilizes Quokka3, an advanced solar cell simulation program, specifically tailored for interdigitated back-contact (IBC) crystalline silicon (c-Si) solar cells. Through meticulous Quokka3 simulations, the influence of several geometric and wafer characteristics of the solar cell backside on current–voltage (I–V) performance has been scientifically explored for IBC c-Si solar cells. The investigation encompasses parameters such as wafer thickness, bulk lifetime, resistivity, emitter and back surface field area fraction, and front- and rear-surface passivation. Optimal values for these parameters have been proposed to enhance the efficiency of IBC solar cells. These recommendations contain an emitter percentage of 70%, a wafer thickness ranging from 200 μm, a wafer resistivity of 1 Ω cm, and a wafer bulk lifetime of at least 10 ms. Moreover, under conditions where the cell is not short-circuited, the potential for achieving higher cell efficiency, up to 26.64%, has been shown.