Synthesis of MoS2 atomic layers using PECVD

Hyeongu Kim; Chisung Ahn; Girish Arabale; Changgu Lee; Taesung Kim

doi:10.1149/05808.0047ecst

Synthesis of MoS₂ atomic layers using PECVD

Hyeongu Kim, Chisung Ahn, Girish Arabale, Changgu Lee, Taesung Kim

Department of Mechanical Engineering

Sungkyunkwan University

Research output: Contribution to journal › Article › peer-review

21 Scopus citations

Abstract

Graphene has become to be the most spotlighted material because it has remarkable characteristics and advantages. Despite of these advantages, graphene is difficult to apply to semiconductor devices because of low on/off ratio respectively with zero band-gap. However, since molybdenum disulfide (MoS ₂) has the band gap of 1.8 eV (single-layer), 1.65 eV (double layer)¹ as well as the similar property with graphene, it can apply to semiconductor devices. In this study, MoS₂ was deposited by Plasma Enhanced CVD (PECVD) under the process temperature from 150 °C to 300 °C with Mo thin film and H₂S gas precursor. Each sample is measured by Raman spectroscopy and it show E_2g ¹ and A_1g mode peak. It is property of material so we can know the number of layer MoS₂.

Original language	English
Pages (from-to)	47-50
Number of pages	4
Journal	ECS Transactions
Volume	58
Issue number	8
DOIs	https://doi.org/10.1149/05808.0047ecst
State	Published - 2013

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abstract = "Graphene has become to be the most spotlighted material because it has remarkable characteristics and advantages. Despite of these advantages, graphene is difficult to apply to semiconductor devices because of low on/off ratio respectively with zero band-gap. However, since molybdenum disulfide (MoS 2) has the band gap of 1.8 eV (single-layer), 1.65 eV (double layer)1 as well as the similar property with graphene, it can apply to semiconductor devices. In this study, MoS2 was deposited by Plasma Enhanced CVD (PECVD) under the process temperature from 150 °C to 300 °C with Mo thin film and H2S gas precursor. Each sample is measured by Raman spectroscopy and it show E2g 1 and A1g mode peak. It is property of material so we can know the number of layer MoS2.",

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T1 - Synthesis of MoS2 atomic layers using PECVD

AU - Kim, Hyeongu

AU - Ahn, Chisung

AU - Arabale, Girish

AU - Lee, Changgu

AU - Kim, Taesung

PY - 2013

Y1 - 2013

N2 - Graphene has become to be the most spotlighted material because it has remarkable characteristics and advantages. Despite of these advantages, graphene is difficult to apply to semiconductor devices because of low on/off ratio respectively with zero band-gap. However, since molybdenum disulfide (MoS 2) has the band gap of 1.8 eV (single-layer), 1.65 eV (double layer)1 as well as the similar property with graphene, it can apply to semiconductor devices. In this study, MoS2 was deposited by Plasma Enhanced CVD (PECVD) under the process temperature from 150 °C to 300 °C with Mo thin film and H2S gas precursor. Each sample is measured by Raman spectroscopy and it show E2g 1 and A1g mode peak. It is property of material so we can know the number of layer MoS2.

AB - Graphene has become to be the most spotlighted material because it has remarkable characteristics and advantages. Despite of these advantages, graphene is difficult to apply to semiconductor devices because of low on/off ratio respectively with zero band-gap. However, since molybdenum disulfide (MoS 2) has the band gap of 1.8 eV (single-layer), 1.65 eV (double layer)1 as well as the similar property with graphene, it can apply to semiconductor devices. In this study, MoS2 was deposited by Plasma Enhanced CVD (PECVD) under the process temperature from 150 °C to 300 °C with Mo thin film and H2S gas precursor. Each sample is measured by Raman spectroscopy and it show E2g 1 and A1g mode peak. It is property of material so we can know the number of layer MoS2.

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DO - 10.1149/05808.0047ecst

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Synthesis of MoS₂ atomic layers using PECVD

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