Synthesis of a material for semiconductor applications: Boron oxynitride prepared by low frequency rf plasma-assisted metalorganic chemical vapor deposition

G. C. Chen; D. C. Lim; S. B. Lee; J. H. Boo; Y. J. Kim; B. Y. Hong

doi:10.1116/1.1585072

Synthesis of a material for semiconductor applications: Boron oxynitride prepared by low frequency rf plasma-assisted metalorganic chemical vapor deposition

G. C. Chen, D. C. Lim, S. B. Lee, J. H. Boo, Y. J. Kim, B. Y. Hong

Department of Chemistry

Sungkyunkwan University

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Original language	English
Pages (from-to)	1886-1890
Number of pages	5
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	21
Issue number	4
DOIs	https://doi.org/10.1116/1.1585072
State	Published - 2003

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Chen, G. C., Lim, D. C., Lee, S. B., Boo, J. H., Kim, Y. J., & Hong, B. Y. (2003). Synthesis of a material for semiconductor applications: Boron oxynitride prepared by low frequency rf plasma-assisted metalorganic chemical vapor deposition. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 21(4), 1886-1890. https://doi.org/10.1116/1.1585072

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title = "Synthesis of a material for semiconductor applications: Boron oxynitride prepared by low frequency rf plasma-assisted metalorganic chemical vapor deposition",

author = "Chen, \{G. C.\} and Lim, \{D. C.\} and Lee, \{S. B.\} and Boo, \{J. H.\} and Kim, \{Y. J.\} and Hong, \{B. Y.\}",

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Chen, GC, Lim, DC, Lee, SB, Boo, JH, Kim, YJ & Hong, BY 2003, 'Synthesis of a material for semiconductor applications: Boron oxynitride prepared by low frequency rf plasma-assisted metalorganic chemical vapor deposition', Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, vol. 21, no. 4, pp. 1886-1890. https://doi.org/10.1116/1.1585072

Synthesis of a material for semiconductor applications: Boron oxynitride prepared by low frequency rf plasma-assisted metalorganic chemical vapor deposition. / Chen, G. C.; Lim, D. C.; Lee, S. B. et al.
In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 21, No. 4, 2003, p. 1886-1890.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Synthesis of a material for semiconductor applications

T2 - Boron oxynitride prepared by low frequency rf plasma-assisted metalorganic chemical vapor deposition

AU - Chen, G. C.

AU - Lim, D. C.

AU - Lee, S. B.

AU - Boo, J. H.

AU - Kim, Y. J.

AU - Hong, B. Y.

PY - 2003

Y1 - 2003

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U2 - 10.1116/1.1585072

DO - 10.1116/1.1585072

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SN - 1071-1023

VL - 21

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EP - 1890

JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

IS - 4

ER -

Synthesis of a material for semiconductor applications: Boron oxynitride prepared by low frequency rf plasma-assisted metalorganic chemical vapor deposition

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