Synthesis and transistor performances of high quality single crystalline vapor-liquid-solid grown Si1-xGex nanowire

S. J. Whang; S. J. Lee; W. F. Yang; B. J. Cho; Y. F. Liew; D. L. Kwong

doi:10.1109/NANO.2007.4601137

Synthesis and transistor performances of high quality single crystalline vapor-liquid-solid grown Si_1-xGe_x nanowire

S. J. Whang, S. J. Lee, W. F. Yang, B. J. Cho, Y. F. Liew, D. L. Kwong

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

We present a successful synthesis of single crystalline homogeneous Si _1-xGe_x nanowires (diameter: 7 - 52nm) via vaporliquid-solid mechanism. Results show that quality, density, and growth rate of Si_1-xGe_x nanowires are greatly affected by the growth temperature and the single crystalline Si_1-xGe_x nanowires without amorphous sheath layer can be obtained at optimized growth temperature. Control of the amount of Ge in nanowire was obtained with different GeH ₄ gas flow rates. Using backgated field effect transistor integrated with HfO₂ gate dielectric, TaN/Ta metal gate and Pd source/drain electrode, Si_1-xGe_x nanowire transistor exhibits p-MOS operation with I_on/I_off ∼ 10⁴, sub-threshold swing of 97 mV/dec.

Original language	English
Title of host publication	2007 7th IEEE International Conference on Nanotechnology - IEEE-NANO 2007, Proceedings
Pages	45-48
Number of pages	4
DOIs	https://doi.org/10.1109/NANO.2007.4601137
State	Published - 2007
Externally published	Yes
Event	2007 7th IEEE International Conference on Nanotechnology - IEEE-NANO 2007 - Hong Kong, China Duration: 2 Aug 2007 → 5 Aug 2007

Publication series

Name	2007 7th IEEE International Conference on Nanotechnology - IEEE-NANO 2007, Proceedings

Conference

Conference	2007 7th IEEE International Conference on Nanotechnology - IEEE-NANO 2007
Country/Territory	China
City	Hong Kong
Period	2/08/07 → 5/08/07

Keywords

High-k
MOSFET
Nanowire
SiGe
VLS

Access to Document

10.1109/NANO.2007.4601137

Cite this

Whang, S. J., Lee, S. J., Yang, W. F., Cho, B. J., Liew, Y. F., & Kwong, D. L. (2007). Synthesis and transistor performances of high quality single crystalline vapor-liquid-solid grown Si_1-xGe_x nanowire. In 2007 7th IEEE International Conference on Nanotechnology - IEEE-NANO 2007, Proceedings (pp. 45-48). Article 4601137 (2007 7th IEEE International Conference on Nanotechnology - IEEE-NANO 2007, Proceedings). https://doi.org/10.1109/NANO.2007.4601137

@inproceedings{bf16212a72874334bd95a63ea1a1e8a8,

title = "Synthesis and transistor performances of high quality single crystalline vapor-liquid-solid grown Si1-xGex nanowire",

abstract = "We present a successful synthesis of single crystalline homogeneous Si 1-xGex nanowires (diameter: 7 - 52nm) via vaporliquid-solid mechanism. Results show that quality, density, and growth rate of Si1-xGex nanowires are greatly affected by the growth temperature and the single crystalline Si1-xGex nanowires without amorphous sheath layer can be obtained at optimized growth temperature. Control of the amount of Ge in nanowire was obtained with different GeH 4 gas flow rates. Using backgated field effect transistor integrated with HfO2 gate dielectric, TaN/Ta metal gate and Pd source/drain electrode, Si1-xGex nanowire transistor exhibits p-MOS operation with Ion/Ioff ∼ 104, sub-threshold swing of 97 mV/dec.",

keywords = "High-k, MOSFET, Nanowire, SiGe, VLS",

author = "Whang, \{S. J.\} and Lee, \{S. J.\} and Yang, \{W. F.\} and Cho, \{B. J.\} and Liew, \{Y. F.\} and Kwong, \{D. L.\}",

year = "2007",

doi = "10.1109/NANO.2007.4601137",

language = "English",

isbn = "1424406080",

series = "2007 7th IEEE International Conference on Nanotechnology - IEEE-NANO 2007, Proceedings",

pages = "45--48",

booktitle = "2007 7th IEEE International Conference on Nanotechnology - IEEE-NANO 2007, Proceedings",

note = "2007 7th IEEE International Conference on Nanotechnology - IEEE-NANO 2007 ; Conference date: 02-08-2007 Through 05-08-2007",

}

Whang, SJ, Lee, SJ, Yang, WF, Cho, BJ, Liew, YF & Kwong, DL 2007, Synthesis and transistor performances of high quality single crystalline vapor-liquid-solid grown Si_1-xGe_x nanowire. in 2007 7th IEEE International Conference on Nanotechnology - IEEE-NANO 2007, Proceedings., 4601137, 2007 7th IEEE International Conference on Nanotechnology - IEEE-NANO 2007, Proceedings, pp. 45-48, 2007 7th IEEE International Conference on Nanotechnology - IEEE-NANO 2007, Hong Kong, China, 2/08/07. https://doi.org/10.1109/NANO.2007.4601137

Synthesis and transistor performances of high quality single crystalline vapor-liquid-solid grown Si_1-xGe_x nanowire. / Whang, S. J.; Lee, S. J.; Yang, W. F. et al.
2007 7th IEEE International Conference on Nanotechnology - IEEE-NANO 2007, Proceedings. 2007. p. 45-48 4601137 (2007 7th IEEE International Conference on Nanotechnology - IEEE-NANO 2007, Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Lee, S. J.

AU - Yang, W. F.

AU - Cho, B. J.

AU - Liew, Y. F.

AU - Kwong, D. L.

PY - 2007

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N2 - We present a successful synthesis of single crystalline homogeneous Si 1-xGex nanowires (diameter: 7 - 52nm) via vaporliquid-solid mechanism. Results show that quality, density, and growth rate of Si1-xGex nanowires are greatly affected by the growth temperature and the single crystalline Si1-xGex nanowires without amorphous sheath layer can be obtained at optimized growth temperature. Control of the amount of Ge in nanowire was obtained with different GeH 4 gas flow rates. Using backgated field effect transistor integrated with HfO2 gate dielectric, TaN/Ta metal gate and Pd source/drain electrode, Si1-xGex nanowire transistor exhibits p-MOS operation with Ion/Ioff ∼ 104, sub-threshold swing of 97 mV/dec.

AB - We present a successful synthesis of single crystalline homogeneous Si 1-xGex nanowires (diameter: 7 - 52nm) via vaporliquid-solid mechanism. Results show that quality, density, and growth rate of Si1-xGex nanowires are greatly affected by the growth temperature and the single crystalline Si1-xGex nanowires without amorphous sheath layer can be obtained at optimized growth temperature. Control of the amount of Ge in nanowire was obtained with different GeH 4 gas flow rates. Using backgated field effect transistor integrated with HfO2 gate dielectric, TaN/Ta metal gate and Pd source/drain electrode, Si1-xGex nanowire transistor exhibits p-MOS operation with Ion/Ioff ∼ 104, sub-threshold swing of 97 mV/dec.

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KW - Nanowire

KW - SiGe

KW - VLS

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DO - 10.1109/NANO.2007.4601137

M3 - Conference contribution

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T3 - 2007 7th IEEE International Conference on Nanotechnology - IEEE-NANO 2007, Proceedings

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BT - 2007 7th IEEE International Conference on Nanotechnology - IEEE-NANO 2007, Proceedings

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Whang SJ, Lee SJ, Yang WF, Cho BJ, Liew YF, Kwong DL. Synthesis and transistor performances of high quality single crystalline vapor-liquid-solid grown Si_1-xGe_x nanowire. In 2007 7th IEEE International Conference on Nanotechnology - IEEE-NANO 2007, Proceedings. 2007. p. 45-48. 4601137. (2007 7th IEEE International Conference on Nanotechnology - IEEE-NANO 2007, Proceedings). doi: 10.1109/NANO.2007.4601137