TY - JOUR
T1 - Synergetic effects in a discharge produced by a dual frequencydual antenna large-area ICP source
AU - Mishra, Anurag
AU - Kim, Kyong Nam
AU - Kim, Tae Hyung
AU - Yeom, Geun Young
PY - 2012/6
Y1 - 2012/6
N2 - Using an RF-compensated Langmuir probe, plasma parameters have been investigated in a discharge produced by a dual frequencydual antenna: the next generation of large-area inductively coupled plasma (ICP) sources. The ICP source was made of two concentric spiral copper coils embedded into each other. The inner and outer coils were energized by RF frequencies of 2 and 13.56MHz, respectively. The discharge was operated at an average pressure of 10mTorr in an argon gas environment. The probe was positioned at a fixed location of 70mm from the source and 160mm from the centre of the ICP source to measure the plasma parameters. However, for discharge uniformity measurements, the probe position was varied from the centre of the discharge to 200mm towards the edge. It was found that the ion density distribution over the wafer varies with RF power ratio (P 2MHz/P 13.56MHz). For a fixed power at 13.56MHz (P 13.56MHz), the plasma density increases very slowly with P 2MHz, when P 2MHz<400W; however, the plasma density increases rapidly when P 2MHz>400W. The electron temperature and plasma potential measurements show decreasing trends with increasing P 2MHz at constant P 13.56MHz. The ion density measurements over the substrate show that good discharge uniformity (4%) can be achieved by adjusting the RF power ratio (P 2MHz/P 13.56MHz).
AB - Using an RF-compensated Langmuir probe, plasma parameters have been investigated in a discharge produced by a dual frequencydual antenna: the next generation of large-area inductively coupled plasma (ICP) sources. The ICP source was made of two concentric spiral copper coils embedded into each other. The inner and outer coils were energized by RF frequencies of 2 and 13.56MHz, respectively. The discharge was operated at an average pressure of 10mTorr in an argon gas environment. The probe was positioned at a fixed location of 70mm from the source and 160mm from the centre of the ICP source to measure the plasma parameters. However, for discharge uniformity measurements, the probe position was varied from the centre of the discharge to 200mm towards the edge. It was found that the ion density distribution over the wafer varies with RF power ratio (P 2MHz/P 13.56MHz). For a fixed power at 13.56MHz (P 13.56MHz), the plasma density increases very slowly with P 2MHz, when P 2MHz<400W; however, the plasma density increases rapidly when P 2MHz>400W. The electron temperature and plasma potential measurements show decreasing trends with increasing P 2MHz at constant P 13.56MHz. The ion density measurements over the substrate show that good discharge uniformity (4%) can be achieved by adjusting the RF power ratio (P 2MHz/P 13.56MHz).
UR - https://www.scopus.com/pages/publications/84862197922
U2 - 10.1088/0963-0252/21/3/035018
DO - 10.1088/0963-0252/21/3/035018
M3 - Article
AN - SCOPUS:84862197922
SN - 0963-0252
VL - 21
JO - Plasma Sources Science and Technology
JF - Plasma Sources Science and Technology
IS - 3
M1 - 035018
ER -