Surfactant-mediated Si/Ge epitaxial crystal growth

Eunja Kim; Chan Wuk Oh; Young Hee Lee

Surfactant-mediated Si/Ge epitaxial crystal growth

Eunja Kim
, Chan Wuk Oh
, Young Hee Lee

Jeonbuk National University

Research output: Contribution to journal › Conference article › peer-review

Abstract

We investigate the kinetic role of a surfactant in the epitaxial Si/Ge crystal growth using ab initio molecular dynamics approach. We examine the previously suggested dimer-exchange mechanisms and find that kinetics plays a crucial role in determining the exchange process. We further find that the diffusion of adatoms on an island in the presence of a surfactant is quite different from the dimer-exchange process on a flat surface.

Original language	English
Pages (from-to)	135-140
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	448
State	Published - 1997
Externally published	Yes
Event	Proceedings of the 1996 MRS Fall Meeting - Boston, MA, USA Duration: 2 Dec 1996 → 6 Dec 1996

Cite this

@article{2844650251984dd89bd484038b11a5b4,

title = "Surfactant-mediated Si/Ge epitaxial crystal growth",

abstract = "We investigate the kinetic role of a surfactant in the epitaxial Si/Ge crystal growth using ab initio molecular dynamics approach. We examine the previously suggested dimer-exchange mechanisms and find that kinetics plays a crucial role in determining the exchange process. We further find that the diffusion of adatoms on an island in the presence of a surfactant is quite different from the dimer-exchange process on a flat surface.",

author = "Eunja Kim and Oh, \{Chan Wuk\} and Lee, \{Young Hee\}",

year = "1997",

language = "English",

volume = "448",

pages = "135--140",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Proceedings of the 1996 MRS Fall Meeting ; Conference date: 02-12-1996 Through 06-12-1996",

}

TY - JOUR

T1 - Surfactant-mediated Si/Ge epitaxial crystal growth

AU - Kim, Eunja

AU - Oh, Chan Wuk

AU - Lee, Young Hee

PY - 1997

Y1 - 1997

N2 - We investigate the kinetic role of a surfactant in the epitaxial Si/Ge crystal growth using ab initio molecular dynamics approach. We examine the previously suggested dimer-exchange mechanisms and find that kinetics plays a crucial role in determining the exchange process. We further find that the diffusion of adatoms on an island in the presence of a surfactant is quite different from the dimer-exchange process on a flat surface.

AB - We investigate the kinetic role of a surfactant in the epitaxial Si/Ge crystal growth using ab initio molecular dynamics approach. We examine the previously suggested dimer-exchange mechanisms and find that kinetics plays a crucial role in determining the exchange process. We further find that the diffusion of adatoms on an island in the presence of a surfactant is quite different from the dimer-exchange process on a flat surface.

UR - https://www.scopus.com/pages/publications/0030704919

M3 - Conference article

AN - SCOPUS:0030704919

SN - 0272-9172

VL - 448

SP - 135

EP - 140

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Proceedings of the 1996 MRS Fall Meeting

Y2 - 2 December 1996 through 6 December 1996

ER -

Surfactant-mediated Si/Ge epitaxial crystal growth

Abstract

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