Surface treatment of polycarbonate and polyethersulphone for SiN_x thin film deposition

Silicon nitride thin films were deposited with good adhesion on plasma treated polyethersulphone (PES) and polycarbonate (PC) substrates by in-situ rf magnetron sputtering. The surfaces of the PES and PC substrates were performed by plasma treatment at various rf powers and processing time in Ar, O₂ atmosphere. From the X-ray Photoelectron Spectroscopy (XPS) examination of the surface of the treated substrates, it was found that the ratio of oxide containing bonds increased with increasing rf power. The surface roughness of the PES and PC substrates increased with increasing rf power. The plasma treated surface of the substrates became hydrophilic as measured by the water contact angle. The water contact angle for the PES and PC substrates decreased with increasing rf power and processing time, significantly. The lowest value of the contact angle of 14.09° was observed at rf power of 200 W. It was observed that the adhesion properties between the SiN_x films and substrates were enhanced by the plasma treatment.