Surface roughness of Ti:LiNb O3 etched by Ar C3 F8 plasma and annealing effect

W. S. Yang; W. K. Kim; D. H. Yoon; J. W. Lim; M. Isshiki; H. Y. Lee

doi:10.1116/1.2178371

Surface roughness of Ti:LiNb O₃ etched by Ar C₃ F₈ plasma and annealing effect

W. S. Yang, W. K. Kim, D. H. Yoon, J. W. Lim, M. Isshiki, H. Y. Lee

Department of Advanced Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

We describe the reactive ion etching of Ti:LiNb O3 single crystal in gas mixtures containing C3 F8 and Ar using neutral loop discharge plasma. The surface roughness of etched Ti:LiNb O3 surface under various gas mixture conditions was analyzed by using atomic force microscopy and scanning electron microscopy. The annealing effect of an etched ridge structure waveguides was also observed.

Original language	English
Pages (from-to)	675-677
Number of pages	3
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	24
Issue number	2
DOIs	https://doi.org/10.1116/1.2178371
State	Published - Mar 2006

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abstract = "We describe the reactive ion etching of Ti:LiNb O3 single crystal in gas mixtures containing C3 F8 and Ar using neutral loop discharge plasma. The surface roughness of etched Ti:LiNb O3 surface under various gas mixture conditions was analyzed by using atomic force microscopy and scanning electron microscopy. The annealing effect of an etched ridge structure waveguides was also observed.",

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T1 - Surface roughness of Ti:LiNb O3 etched by Ar C3 F8 plasma and annealing effect

AU - Yang, W. S.

AU - Kim, W. K.

AU - Yoon, D. H.

AU - Lim, J. W.

AU - Isshiki, M.

AU - Lee, H. Y.

PY - 2006/3

Y1 - 2006/3

N2 - We describe the reactive ion etching of Ti:LiNb O3 single crystal in gas mixtures containing C3 F8 and Ar using neutral loop discharge plasma. The surface roughness of etched Ti:LiNb O3 surface under various gas mixture conditions was analyzed by using atomic force microscopy and scanning electron microscopy. The annealing effect of an etched ridge structure waveguides was also observed.

AB - We describe the reactive ion etching of Ti:LiNb O3 single crystal in gas mixtures containing C3 F8 and Ar using neutral loop discharge plasma. The surface roughness of etched Ti:LiNb O3 surface under various gas mixture conditions was analyzed by using atomic force microscopy and scanning electron microscopy. The annealing effect of an etched ridge structure waveguides was also observed.

UR - https://www.scopus.com/pages/publications/33645510215

U2 - 10.1116/1.2178371

DO - 10.1116/1.2178371

M3 - Article

AN - SCOPUS:33645510215

SN - 1071-1023

VL - 24

SP - 675

EP - 677

JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

IS - 2

ER -

Surface roughness of Ti:LiNb O₃ etched by Ar C₃ F₈ plasma and annealing effect

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