Surface potential relaxation of ferroelectric domain investigated by kelvin probe force microscopy

Jiyoon Kim, Yunseok Kim, Kwangsoo No, Simon Bhlmann, Seungbum Hong, Yun Woo Nam, Seung Hyun Kim

Research output: Contribution to journalConference articlepeer-review

9 Scopus citations

Abstract

We attempted to investigate the surface potential relaxation of ferroelectric thin film domain by using Kelvin probe force microscopy (KFM). To avoid charge suction phenomenon by a grounded tip, the offset voltage was applied to the base line of the pulse trace. It was found that the surface potential contrast decreased in terms of elapsed time. Spreading a charge around domain makes the surface potential contrast decrease. Coulomb force repulsion and retention loss contributed to the spreading of surface charges on the ferroelectric domain. These results help us understand surface potential relaxation of nanoscale ferroelectric domains.

Original languageEnglish
Pages (from-to)25-30
Number of pages6
JournalIntegrated Ferroelectrics
Volume85
Issue number1
DOIs
StatePublished - 2006
Externally publishedYes
Event18th International Symposium on Integrated Ferroelectrics (ISIF 2006) - Honolulu, Hawaii, United States
Duration: 23 Apr 200627 Apr 2006

Keywords

  • Ferroelectric domain
  • Ferroelectric thin film
  • Grounded tip effect
  • KFM
  • Surface potential relaxation

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