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Surface modification of titanium carbide MXene monolayers (Ti2C and Ti3C2)viachalcogenide and halogenide atoms

  • M. Faraji
  • , A. Bafekry
  • , M. M. Fadlallah
  • , F. Molaei
  • , N. N. Hieu
  • , P. Qian
  • , M. Ghergherehchi
  • , D. Gogova
  • TOBB University of Economics and Technology
  • Shahid Beheshti University
  • University of Antwerp
  • University of Arizona
  • Benha University
  • Duy Tan University
  • University of Science and Technology Beijing
  • Bulgarian Academy of Sciences

Research output: Contribution to journalArticlepeer-review

Abstract

Inspired by the recent successful growth of Ti2C and Ti3C2monolayers, here, we investigate the structural, electronic, and mechanical properties of functionalized Ti2C and Ti3C2monolayers by means of density functional theory calculations. The results reveal that monolayers of Ti2C and Ti3C2are dynamically stable metals. Phonon band dispersion calculations demonstrate that two-surface functionalization of Ti2C and Ti3C2viachalcogenides (S, Se, and Te), halides (F, Cl, Br, and I), and oxygen atoms results in dynamically stable novel functionalized monolayer materials. Electronic band dispersions and density of states calculations reveal that all functionalized monolayer structures preserve the metallic nature of both Ti2C and Ti3C2except Ti2C-O2, which possesses the behavior of an indirect semiconductorviafull-surface oxygen passivation. In addition, it is shown that although halide passivated Ti3C2structures are still metallic, there exist multiple Dirac-like cones around the Fermi energy level, which indicates that semi-metallic behavior can be obtained upon external effects by tuning the energy of the Dirac cones. In addition, the computed linear-elastic parameters prove that functionalization is a powerful tool in tuning the mechanical properties of stiff monolayers of bare Ti2C and Ti3C2. Our study discloses that the electronic and structural properties of Ti2C and Ti3C2MXene monolayers are suitable for surface modification, which is highly desirable for material property engineering and device integration.

Original languageEnglish
Pages (from-to)15319-15328
Number of pages10
JournalPhysical Chemistry Chemical Physics
Volume23
Issue number28
DOIs
StatePublished - 28 Jul 2021

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