Surface confinement of the InN-rich phase in thick InGaN on GaN

Taek Seung Kim; Sang Woo Kim; Han Ki Kim; Ji Myon Lee

doi:10.1016/j.spmi.2006.08.003

Surface confinement of the InN-rich phase in thick InGaN on GaN

Taek Seung Kim
, Sang Woo Kim
, Han Ki Kim
, Ji Myon Lee

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

The surface confinement of InN-rich phase in thick In_0.15Ga_0.85N epitaxial films on GaN were observed by photoluminescence depth profiling employing an inductively coupled Cl₂ plasma etching technique. The photoluminescence measurements showed that InN-rich phases were present on the surface of the thick In_0.15Ga_0.85N films. After removing the surface layer of 50 nm, the PL peaks corresponding to the InN-rich phases completely disappeared, suggesting that the InN-rich phase region is confined to a depth of 50 nm.

Original language	English
Pages (from-to)	545-550
Number of pages	6
Journal	Superlattices and Microstructures
Volume	40
Issue number	4-6 SPEC. ISS.
DOIs	https://doi.org/10.1016/j.spmi.2006.08.003
State	Published - Oct 2006
Externally published	Yes

Keywords

Depth-profiling
Etching
InN-rich phase
Photoluminescence

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10.1016/j.spmi.2006.08.003

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@article{10e7175ddaee427c94676242c2114935,

title = "Surface confinement of the InN-rich phase in thick InGaN on GaN",

abstract = "The surface confinement of InN-rich phase in thick In0.15Ga0.85N epitaxial films on GaN were observed by photoluminescence depth profiling employing an inductively coupled Cl2 plasma etching technique. The photoluminescence measurements showed that InN-rich phases were present on the surface of the thick In0.15Ga0.85N films. After removing the surface layer of 50 nm, the PL peaks corresponding to the InN-rich phases completely disappeared, suggesting that the InN-rich phase region is confined to a depth of 50 nm.",

keywords = "Depth-profiling, Etching, InN-rich phase, Photoluminescence",

author = "Kim, \{Taek Seung\} and Kim, \{Sang Woo\} and Kim, \{Han Ki\} and Lee, \{Ji Myon\}",

year = "2006",

month = oct,

doi = "10.1016/j.spmi.2006.08.003",

language = "English",

volume = "40",

pages = "545--550",

journal = "Superlattices and Microstructures",

issn = "0749-6036",

publisher = "Academic Press Inc.",

number = "4-6 SPEC. ISS.",

}

TY - JOUR

T1 - Surface confinement of the InN-rich phase in thick InGaN on GaN

AU - Kim, Taek Seung

AU - Kim, Sang Woo

AU - Kim, Han Ki

AU - Lee, Ji Myon

PY - 2006/10

Y1 - 2006/10

N2 - The surface confinement of InN-rich phase in thick In0.15Ga0.85N epitaxial films on GaN were observed by photoluminescence depth profiling employing an inductively coupled Cl2 plasma etching technique. The photoluminescence measurements showed that InN-rich phases were present on the surface of the thick In0.15Ga0.85N films. After removing the surface layer of 50 nm, the PL peaks corresponding to the InN-rich phases completely disappeared, suggesting that the InN-rich phase region is confined to a depth of 50 nm.

AB - The surface confinement of InN-rich phase in thick In0.15Ga0.85N epitaxial films on GaN were observed by photoluminescence depth profiling employing an inductively coupled Cl2 plasma etching technique. The photoluminescence measurements showed that InN-rich phases were present on the surface of the thick In0.15Ga0.85N films. After removing the surface layer of 50 nm, the PL peaks corresponding to the InN-rich phases completely disappeared, suggesting that the InN-rich phase region is confined to a depth of 50 nm.

KW - Depth-profiling

KW - Etching

KW - InN-rich phase

KW - Photoluminescence

UR - https://www.scopus.com/pages/publications/33845233561

U2 - 10.1016/j.spmi.2006.08.003

DO - 10.1016/j.spmi.2006.08.003

M3 - Article

AN - SCOPUS:33845233561

SN - 0749-6036

VL - 40

SP - 545

EP - 550

JO - Superlattices and Microstructures

JF - Superlattices and Microstructures

IS - 4-6 SPEC. ISS.

ER -

Surface confinement of the InN-rich phase in thick InGaN on GaN

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Keywords

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