Support Vector Regression Model for Determining Optimal Parameters of HfAlO-Based Charge Trapping Memory Devices

The production and optimization of HfAlO-based charge trapping memory devices is central to our research. Current optimization methods, based largely on experimental experience, are tedious and time-consuming. We examine various fabrication parameters and use the resulting memory window data to train machine learning algorithms. An optimized Support Vector Regression model, processed using the Swarm algorithm, is applied for data prediction and process optimization. Our model achieves a MSE of 0.47, an R² of 0.98856, and a recognition accuracy of 90.3% under cross-validation. The findings underscore the effectiveness of machine learning algorithms in non-volatile memory fabrication process optimization, enabling efficient parameter selection or outcome prediction.