Superstrate p-i-n a-Si:H solar cells on textured ZnO:Al front transparent conduction oxide

Jeong Chul Lee; Viresh Dutta; Jinsu Yoo; Junsin Yi; Jinsoo Song; Kyung Hoon Yoon

doi:10.1016/j.spmi.2007.04.050

Superstrate p-i-n a-Si:H solar cells on textured ZnO:Al front transparent conduction oxide

Jeong Chul Lee
, Viresh Dutta
, Jinsu Yoo
, Junsin Yi
, Jinsoo Song
, Kyung Hoon Yoon

Department of Electronic and Electrical Engineering

Research output: Contribution to journal › Article › peer-review

40 Scopus citations

Abstract

Superstrate p-i-n amorphous silicon thin-film (a-Si:H) solar cells are prepared on SnO₂:F and ZnO:Al transparent conducting oxides (TCOs) in order to see the effect of TCO/p-layers on a-Si:H solar cell operation. The solar cells prepared on textured ZnO:Al have higher open circuit voltage V_oc than cells prepared on SnO₂:F. The presence of a thin microcrystalline p-type silicon layer (μc-Si:H) between ZnO:Al and p a-SiC:H plays a major role by causing an improvement in the fill factor as well as in V_oc of a-Si:H solar cells prepared on ZnO:Al TCO. Without any treatment of the p-i interface, we could obtain a high V_oc of 994 mV while keeping the fill factor (72.7%) and short circuit current density J_sc at the same level as for the cells on SnO₂:F TCO. This high V_oc value can be attributed to modification in the current transport in this region due to creation of a potential barrier.

Original language	English
Pages (from-to)	369-374
Number of pages	6
Journal	Superlattices and Microstructures
Volume	42
Issue number	1-6
DOIs	https://doi.org/10.1016/j.spmi.2007.04.050
State	Published - Jul 2007

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@article{ea3f398f9d62473cab325ba73a8524ab,

title = "Superstrate p-i-n a-Si:H solar cells on textured ZnO:Al front transparent conduction oxide",

abstract = "Superstrate p-i-n amorphous silicon thin-film (a-Si:H) solar cells are prepared on SnO2:F and ZnO:Al transparent conducting oxides (TCOs) in order to see the effect of TCO/p-layers on a-Si:H solar cell operation. The solar cells prepared on textured ZnO:Al have higher open circuit voltage Voc than cells prepared on SnO2:F. The presence of a thin microcrystalline p-type silicon layer (μc-Si:H) between ZnO:Al and p a-SiC:H plays a major role by causing an improvement in the fill factor as well as in Voc of a-Si:H solar cells prepared on ZnO:Al TCO. Without any treatment of the p-i interface, we could obtain a high Voc of 994 mV while keeping the fill factor (72.7\%) and short circuit current density Jsc at the same level as for the cells on SnO2:F TCO. This high Voc value can be attributed to modification in the current transport in this region due to creation of a potential barrier.",

author = "Lee, \{Jeong Chul\} and Viresh Dutta and Jinsu Yoo and Junsin Yi and Jinsoo Song and Yoon, \{Kyung Hoon\}",

year = "2007",

month = jul,

doi = "10.1016/j.spmi.2007.04.050",

language = "English",

volume = "42",

pages = "369--374",

journal = "Superlattices and Microstructures",

issn = "0749-6036",

publisher = "Academic Press Inc.",

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TY - JOUR

T1 - Superstrate p-i-n a-Si:H solar cells on textured ZnO:Al front transparent conduction oxide

AU - Lee, Jeong Chul

AU - Dutta, Viresh

AU - Yoo, Jinsu

AU - Yi, Junsin

AU - Song, Jinsoo

AU - Yoon, Kyung Hoon

PY - 2007/7

Y1 - 2007/7

N2 - Superstrate p-i-n amorphous silicon thin-film (a-Si:H) solar cells are prepared on SnO2:F and ZnO:Al transparent conducting oxides (TCOs) in order to see the effect of TCO/p-layers on a-Si:H solar cell operation. The solar cells prepared on textured ZnO:Al have higher open circuit voltage Voc than cells prepared on SnO2:F. The presence of a thin microcrystalline p-type silicon layer (μc-Si:H) between ZnO:Al and p a-SiC:H plays a major role by causing an improvement in the fill factor as well as in Voc of a-Si:H solar cells prepared on ZnO:Al TCO. Without any treatment of the p-i interface, we could obtain a high Voc of 994 mV while keeping the fill factor (72.7%) and short circuit current density Jsc at the same level as for the cells on SnO2:F TCO. This high Voc value can be attributed to modification in the current transport in this region due to creation of a potential barrier.

AB - Superstrate p-i-n amorphous silicon thin-film (a-Si:H) solar cells are prepared on SnO2:F and ZnO:Al transparent conducting oxides (TCOs) in order to see the effect of TCO/p-layers on a-Si:H solar cell operation. The solar cells prepared on textured ZnO:Al have higher open circuit voltage Voc than cells prepared on SnO2:F. The presence of a thin microcrystalline p-type silicon layer (μc-Si:H) between ZnO:Al and p a-SiC:H plays a major role by causing an improvement in the fill factor as well as in Voc of a-Si:H solar cells prepared on ZnO:Al TCO. Without any treatment of the p-i interface, we could obtain a high Voc of 994 mV while keeping the fill factor (72.7%) and short circuit current density Jsc at the same level as for the cells on SnO2:F TCO. This high Voc value can be attributed to modification in the current transport in this region due to creation of a potential barrier.

UR - https://www.scopus.com/pages/publications/34548491212

U2 - 10.1016/j.spmi.2007.04.050

DO - 10.1016/j.spmi.2007.04.050

M3 - Article

AN - SCOPUS:34548491212

SN - 0749-6036

VL - 42

SP - 369

EP - 374

JO - Superlattices and Microstructures

JF - Superlattices and Microstructures

IS - 1-6

ER -

Superstrate p-i-n a-Si:H solar cells on textured ZnO:Al front transparent conduction oxide

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