Supersonic jet epitaxy of single crystalline cubic SiC thin films on Si substrates from t-Butyldimethylsilane

Jin Hyo Boo; S. A. Ustin; W. Ho

doi:10.1016/S0040-6090(98)00351-4

Supersonic jet epitaxy of single crystalline cubic SiC thin films on Si substrates from t-Butyldimethylsilane

Jin Hyo Boo
, S. A. Ustin
, W. Ho

Department of Chemistry

Cornell University

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

Cubic SiC thin films have been grown by supersonic jet epitaxy (SJE) using the single molecular precursor t-butyldimethylsilane (TBDMS), (CH₃)₃C-SiH(CH₃)₂. Single crystal cubic SiC thin films were grown on both carburized and uncarburized Si(100) at a temperature of 830°C. Highly oriented cubic SiC(111) thin films were obtained on carburized and uncarburized Si(111) substrates at 830°C. This growth temperature is much lower than conventional CVD growth temperatures. It is believed that this is the first report of SiC growth using t-butyldimethylsilane.

Original language	English
Pages (from-to)	124-128
Number of pages	5
Journal	Thin Solid Films
Volume	324
Issue number	1-2
DOIs	https://doi.org/10.1016/S0040-6090(98)00351-4
State	Published - 1 Jul 1998

Keywords

Epitaxy
Organometallic vapour deposition
Silicon
Silicon carbide

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10.1016/S0040-6090(98)00351-4

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title = "Supersonic jet epitaxy of single crystalline cubic SiC thin films on Si substrates from t-Butyldimethylsilane",

abstract = "Cubic SiC thin films have been grown by supersonic jet epitaxy (SJE) using the single molecular precursor t-butyldimethylsilane (TBDMS), (CH3)3C-SiH(CH3)2. Single crystal cubic SiC thin films were grown on both carburized and uncarburized Si(100) at a temperature of 830°C. Highly oriented cubic SiC(111) thin films were obtained on carburized and uncarburized Si(111) substrates at 830°C. This growth temperature is much lower than conventional CVD growth temperatures. It is believed that this is the first report of SiC growth using t-butyldimethylsilane.",

keywords = "Epitaxy, Organometallic vapour deposition, Silicon, Silicon carbide",

author = "Boo, \{Jin Hyo\} and Ustin, \{S. A.\} and W. Ho",

year = "1998",

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doi = "10.1016/S0040-6090(98)00351-4",

language = "English",

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TY - JOUR

T1 - Supersonic jet epitaxy of single crystalline cubic SiC thin films on Si substrates from t-Butyldimethylsilane

AU - Boo, Jin Hyo

AU - Ustin, S. A.

AU - Ho, W.

PY - 1998/7/1

Y1 - 1998/7/1

N2 - Cubic SiC thin films have been grown by supersonic jet epitaxy (SJE) using the single molecular precursor t-butyldimethylsilane (TBDMS), (CH3)3C-SiH(CH3)2. Single crystal cubic SiC thin films were grown on both carburized and uncarburized Si(100) at a temperature of 830°C. Highly oriented cubic SiC(111) thin films were obtained on carburized and uncarburized Si(111) substrates at 830°C. This growth temperature is much lower than conventional CVD growth temperatures. It is believed that this is the first report of SiC growth using t-butyldimethylsilane.

AB - Cubic SiC thin films have been grown by supersonic jet epitaxy (SJE) using the single molecular precursor t-butyldimethylsilane (TBDMS), (CH3)3C-SiH(CH3)2. Single crystal cubic SiC thin films were grown on both carburized and uncarburized Si(100) at a temperature of 830°C. Highly oriented cubic SiC(111) thin films were obtained on carburized and uncarburized Si(111) substrates at 830°C. This growth temperature is much lower than conventional CVD growth temperatures. It is believed that this is the first report of SiC growth using t-butyldimethylsilane.

KW - Epitaxy

KW - Organometallic vapour deposition

KW - Silicon

KW - Silicon carbide

UR - https://www.scopus.com/pages/publications/0032121824

U2 - 10.1016/S0040-6090(98)00351-4

DO - 10.1016/S0040-6090(98)00351-4

M3 - Article

AN - SCOPUS:0032121824

SN - 0040-6090

VL - 324

SP - 124

EP - 128

JO - Thin Solid Films

JF - Thin Solid Films

IS - 1-2

ER -

Supersonic jet epitaxy of single crystalline cubic SiC thin films on Si substrates from t-Butyldimethylsilane

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Keywords

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