Abstract
The mechanical properties of ITO films such as adhesion and internal stress are very important for the commercial application of solar cell devices. We report high quality pulsed DC magnetron sputtered ITO films deposited on silicon and glass substrates with low resistivity and high transmittance for various working pressures ranging from 0.96 to 3.0 mTorr. ITO films showed the lowest resistivity of 2.68×10-4 Ω cm, high hall mobility of 46.89 cm2/V.s, and high transmittance (>85%) for the ITO films deposited at a low working pressure of 0.99 mTorr. The ITO films deposited at a low working (0.96 mTorr) pressure had both amorphous and polycrystalline structures and were found to have compressive stress while the ITO films deposited at higher temperature than 0.99 mTorr was mixture of amorphous and polycrystalline and was found to have tensile stress.
| Original language | English |
|---|---|
| Pages (from-to) | 351-354 |
| Number of pages | 4 |
| Journal | Transactions on Electrical and Electronic Materials |
| Volume | 17 |
| Issue number | 6 |
| DOIs | |
| State | Published - Dec 2016 |
UN SDGs
This output contributes to the following UN Sustainable Development Goals (SDGs)
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SDG 7 Affordable and Clean Energy
Keywords
- Internal stress
- ITO (indium tin oxide)
- Pulsed DC magnetron sputtering
- SHJ solar cell
- Working pressure
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