Study on the low-angle surface scattering of the low-energy ions

  • K. S. Min
  • , B. J. Park
  • , J. B. Park
  • , S. K. Kang
  • , G. Y. Yeom
  • , D. H. Lee

Research output: Contribution to journalArticlepeer-review

5 Scopus citations

Abstract

The energy loss during the reflection of ions from a flat silicon surface at low incident angles and the scattering angles after the reflection were indirectly investigated for incident ion energies lower than 1 keV. Estimates of the energy loss during reflection from a flat silicon surface showed that increases in the incident ion energy and the angle increased the energy loss during the reflection from the reflector due to collisional energy loss. At an incident angle of 5°, the energy loss was about 12 % of the incident energy. After reflection, more than 99 % of the ions were neutralized, and the reflected atoms were scattered with a peak near a reflection angle of 10°, possibly indicating particle reflection by elastic colusion.

Original languageEnglish
Pages (from-to)967-971
Number of pages5
JournalJournal of the Korean Physical Society
Volume51
Issue number3
DOIs
StatePublished - Sep 2007

Keywords

  • Nanoscale etch
  • Neutral beam etching
  • Surface scattering

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