Abstract
The energy loss during the reflection of ions from a flat silicon surface at low incident angles and the scattering angles after the reflection were indirectly investigated for incident ion energies lower than 1 keV. Estimates of the energy loss during reflection from a flat silicon surface showed that increases in the incident ion energy and the angle increased the energy loss during the reflection from the reflector due to collisional energy loss. At an incident angle of 5°, the energy loss was about 12 % of the incident energy. After reflection, more than 99 % of the ions were neutralized, and the reflected atoms were scattered with a peak near a reflection angle of 10°, possibly indicating particle reflection by elastic colusion.
| Original language | English |
|---|---|
| Pages (from-to) | 967-971 |
| Number of pages | 5 |
| Journal | Journal of the Korean Physical Society |
| Volume | 51 |
| Issue number | 3 |
| DOIs | |
| State | Published - Sep 2007 |
Keywords
- Nanoscale etch
- Neutral beam etching
- Surface scattering