Study on the Etching selectivity of oxide films in dry cleaning process with NF3 and H2O

Sung Min Kang; Tae Hyung Kim; Taesung Kim

doi:10.4028/www.scientific.net/SSP.255.86

Study on the Etching selectivity of oxide films in dry cleaning process with NF₃ and H₂O

Sung Min Kang
, Tae Hyung Kim
, Taesung Kim

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

2 Scopus citations

Abstract

Dry cleaning process has been limited to particular field of removing native oxide because it has low etching selectivity for various oxide films. To increase etching selectivity, we added H₂O steam feeding step before NF3 feeding step. From the experimental, we can change selectivity between oxide films from tens to hundreds.

Original language	English
Title of host publication	Ultra Clean Processing of Semiconductor Surfaces XIII
Editors	Paul W. Mertens, Marc Meuris, Marc Meuris, Marc Heyns
Publisher	Trans Tech Publications Ltd
Pages	86-90
Number of pages	5
ISBN (Print)	9783035710847
DOIs	https://doi.org/10.4028/www.scientific.net/SSP.255.86
State	Published - 2016
Externally published	Yes
Event	13th International Symposium on Ultra Clean Processing of Semiconductor Surfaces , UCPSS 2016 - Knokke, Belgium Duration: 12 Sep 2016 → 14 Sep 2016

Publication series

Name	Solid State Phenomena
Volume	255
ISSN (Print)	1012-0394
ISSN (Electronic)	1662-9779

Conference

Conference	13th International Symposium on Ultra Clean Processing of Semiconductor Surfaces , UCPSS 2016
Country/Territory	Belgium
City	Knokke
Period	12/09/16 → 14/09/16

Keywords

Cleaning
Dry Cleaning
HF-Solution
NF+HO Dry Cleaning
NF–based Gas Cleaning
Oxide Film Etching
Selectivity

Access to Document

10.4028/www.scientific.net/SSP.255.86

Cite this

Kang, S. M., Kim, T. H., & Kim, T. (2016). Study on the Etching selectivity of oxide films in dry cleaning process with NF₃ and H₂O. In P. W. Mertens, M. Meuris, M. Meuris, & M. Heyns (Eds.), Ultra Clean Processing of Semiconductor Surfaces XIII (pp. 86-90). (Solid State Phenomena; Vol. 255). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/SSP.255.86

@inproceedings{6b5088d9423b46ebb0f4a8e2a567dee0,

title = "Study on the Etching selectivity of oxide films in dry cleaning process with NF3 and H2O",

abstract = "Dry cleaning process has been limited to particular field of removing native oxide because it has low etching selectivity for various oxide films. To increase etching selectivity, we added H2O steam feeding step before NF3 feeding step. From the experimental, we can change selectivity between oxide films from tens to hundreds.",

keywords = "Cleaning, Dry Cleaning, HF-Solution, NF+HO Dry Cleaning, NF–based Gas Cleaning, Oxide Film Etching, Selectivity",

author = "Kang, \{Sung Min\} and Kim, \{Tae Hyung\} and Taesung Kim",

note = "Publisher Copyright: {\textcopyright} 2016 Trans Tech Publications, Switzerland.; 13th International Symposium on Ultra Clean Processing of Semiconductor Surfaces , UCPSS 2016 ; Conference date: 12-09-2016 Through 14-09-2016",

year = "2016",

doi = "10.4028/www.scientific.net/SSP.255.86",

language = "English",

isbn = "9783035710847",

series = "Solid State Phenomena",

publisher = "Trans Tech Publications Ltd",

pages = "86--90",

editor = "Mertens, \{Paul W.\} and Marc Meuris and Marc Meuris and Marc Heyns",

booktitle = "Ultra Clean Processing of Semiconductor Surfaces XIII",

}

Kang, SM, Kim, TH & Kim, T 2016, Study on the Etching selectivity of oxide films in dry cleaning process with NF₃ and H₂O. in PW Mertens, M Meuris, M Meuris & M Heyns (eds), Ultra Clean Processing of Semiconductor Surfaces XIII. Solid State Phenomena, vol. 255, Trans Tech Publications Ltd, pp. 86-90, 13th International Symposium on Ultra Clean Processing of Semiconductor Surfaces , UCPSS 2016, Knokke, Belgium, 12/09/16. https://doi.org/10.4028/www.scientific.net/SSP.255.86

Study on the Etching selectivity of oxide films in dry cleaning process with NF₃ and H₂O. / Kang, Sung Min; Kim, Tae Hyung; Kim, Taesung.
Ultra Clean Processing of Semiconductor Surfaces XIII. ed. / Paul W. Mertens; Marc Meuris; Marc Meuris; Marc Heyns. Trans Tech Publications Ltd, 2016. p. 86-90 (Solid State Phenomena; Vol. 255).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Kim, Taesung

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N2 - Dry cleaning process has been limited to particular field of removing native oxide because it has low etching selectivity for various oxide films. To increase etching selectivity, we added H2O steam feeding step before NF3 feeding step. From the experimental, we can change selectivity between oxide films from tens to hundreds.

AB - Dry cleaning process has been limited to particular field of removing native oxide because it has low etching selectivity for various oxide films. To increase etching selectivity, we added H2O steam feeding step before NF3 feeding step. From the experimental, we can change selectivity between oxide films from tens to hundreds.

KW - Cleaning

KW - Dry Cleaning

KW - HF-Solution

KW - NF+HO Dry Cleaning

KW - NF–based Gas Cleaning

KW - Oxide Film Etching

KW - Selectivity

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