Study on interfacial properties of InGaAs and GaAs integrated with chemical-vapor-deposited high- k gate dielectrics using x-ray photoelectron spectroscopy

H. J. Oh; J. Q. Lin; S. J. Lee; G. K. Dalapati; A. Sridhara; D. Z. Chi; S. J. Chua; G. Q. Lo; D. L. Kwong

doi:10.1063/1.2968293

Study on interfacial properties of InGaAs and GaAs integrated with chemical-vapor-deposited high- k gate dielectrics using x-ray photoelectron spectroscopy

H. J. Oh
, J. Q. Lin
, S. J. Lee
, G. K. Dalapati
, A. Sridhara
, D. Z. Chi
, S. J. Chua
, G. Q. Lo
, D. L. Kwong

Research output: Contribution to journal › Article › peer-review

23 Scopus citations

Abstract

Interfacial reaction study using x-ray photoelectron spectroscopy was carried out for metal-organic chemical-vapor-deposited Hf O2 and HfAlO gate dielectrics on p- In0.53 Ga0.47 As layer as compared to the cases of p -GaAs substrate. The results show that the alloying of GaAs with InAs (In0.53 Ga0.47 As) in the III-V channel layer and the alloying Hf O2 with Al2 O3 in the high- k dielectric can be an effective way to improve the interface quality due to their significant suppression effects on native oxides formation, especially arsenic oxide which causes Fermi level pinning on the high- k /III-V channel interface during the fabrication processes. Transmission electron microscopy result and the electrical characteristics of HfAlOp- In0.53 Ga0.47 As capacitors further validate the x-ray photoelectron spectroscopy observations.

Original language	English
Article number	062107
Journal	Applied Physics Letters
Volume	93
Issue number	6
DOIs	https://doi.org/10.1063/1.2968293
State	Published - 2008
Externally published	Yes

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@article{3dfb1a0802db4dcd8417f239dc50845a,

title = "Study on interfacial properties of InGaAs and GaAs integrated with chemical-vapor-deposited high- k gate dielectrics using x-ray photoelectron spectroscopy",

abstract = "Interfacial reaction study using x-ray photoelectron spectroscopy was carried out for metal-organic chemical-vapor-deposited Hf O2 and HfAlO gate dielectrics on p- In0.53 Ga0.47 As layer as compared to the cases of p -GaAs substrate. The results show that the alloying of GaAs with InAs (In0.53 Ga0.47 As) in the III-V channel layer and the alloying Hf O2 with Al2 O3 in the high- k dielectric can be an effective way to improve the interface quality due to their significant suppression effects on native oxides formation, especially arsenic oxide which causes Fermi level pinning on the high- k /III-V channel interface during the fabrication processes. Transmission electron microscopy result and the electrical characteristics of HfAlOp- In0.53 Ga0.47 As capacitors further validate the x-ray photoelectron spectroscopy observations.",

author = "Oh, \{H. J.\} and Lin, \{J. Q.\} and Lee, \{S. J.\} and Dalapati, \{G. K.\} and A. Sridhara and Chi, \{D. Z.\} and Chua, \{S. J.\} and Lo, \{G. Q.\} and Kwong, \{D. L.\}",

year = "2008",

doi = "10.1063/1.2968293",

language = "English",

volume = "93",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "6",

}

TY - JOUR

T1 - Study on interfacial properties of InGaAs and GaAs integrated with chemical-vapor-deposited high- k gate dielectrics using x-ray photoelectron spectroscopy

AU - Oh, H. J.

AU - Lin, J. Q.

AU - Lee, S. J.

AU - Dalapati, G. K.

AU - Sridhara, A.

AU - Chi, D. Z.

AU - Chua, S. J.

AU - Lo, G. Q.

AU - Kwong, D. L.

PY - 2008

Y1 - 2008

N2 - Interfacial reaction study using x-ray photoelectron spectroscopy was carried out for metal-organic chemical-vapor-deposited Hf O2 and HfAlO gate dielectrics on p- In0.53 Ga0.47 As layer as compared to the cases of p -GaAs substrate. The results show that the alloying of GaAs with InAs (In0.53 Ga0.47 As) in the III-V channel layer and the alloying Hf O2 with Al2 O3 in the high- k dielectric can be an effective way to improve the interface quality due to their significant suppression effects on native oxides formation, especially arsenic oxide which causes Fermi level pinning on the high- k /III-V channel interface during the fabrication processes. Transmission electron microscopy result and the electrical characteristics of HfAlOp- In0.53 Ga0.47 As capacitors further validate the x-ray photoelectron spectroscopy observations.

AB - Interfacial reaction study using x-ray photoelectron spectroscopy was carried out for metal-organic chemical-vapor-deposited Hf O2 and HfAlO gate dielectrics on p- In0.53 Ga0.47 As layer as compared to the cases of p -GaAs substrate. The results show that the alloying of GaAs with InAs (In0.53 Ga0.47 As) in the III-V channel layer and the alloying Hf O2 with Al2 O3 in the high- k dielectric can be an effective way to improve the interface quality due to their significant suppression effects on native oxides formation, especially arsenic oxide which causes Fermi level pinning on the high- k /III-V channel interface during the fabrication processes. Transmission electron microscopy result and the electrical characteristics of HfAlOp- In0.53 Ga0.47 As capacitors further validate the x-ray photoelectron spectroscopy observations.

UR - https://www.scopus.com/pages/publications/49749114556

U2 - 10.1063/1.2968293

DO - 10.1063/1.2968293

M3 - Article

AN - SCOPUS:49749114556

SN - 0003-6951

VL - 93

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 6

M1 - 062107

ER -

Study on interfacial properties of InGaAs and GaAs integrated with chemical-vapor-deposited high- k gate dielectrics using x-ray photoelectron spectroscopy

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