Study on hydrogen-based reactive ion etching of Ovonic threshold switch (OTS) materials for phase change memory devices
- D. S. Kim
- , Y. J. Gill
- , Y. J. Jang
- , Y. E. Kim
- , G. Y. Yeom
- Sungkyunkwan University
Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review
1
Link opens in a new tab
Scopus
citations