Study of low resistivity and high work function ITO films prepared by oxygen flow rates and N2O plasma treatment for amorphous/crystalline silicon heterojunction solar cells

Shahzada Qamar Hussain; Woong Kyo Oh; Sunbo Kim; Shihyun Ahn; Anh Huy Tuan Le; Hyeongsik Park; Youngseok Lee; Vinh Ai Dao; S. Velumani; Junsin Yi

doi:10.1166/jnn.2014.10142

Study of low resistivity and high work function ITO films prepared by oxygen flow rates and N₂O plasma treatment for amorphous/crystalline silicon heterojunction solar cells

Shahzada Qamar Hussain, Woong Kyo Oh, Sunbo Kim, Shihyun Ahn, Anh Huy Tuan Le, Hyeongsik Park, Youngseok Lee, Vinh Ai Dao, S. Velumani, Junsin Yi

Department of Electronic and Electrical Engineering

Research output: Contribution to journal › Article › peer-review

15 Scopus citations

Abstract

Pulsed DC magnetron sputtered indium tin oxide (ITO) films deposited on glass substrates with lowest resistivity of 2.62 × 10^-4 Ω.cm and high transmittance of about 89% in the visible wavelength region. We report the enhancement of ITO work function (Φ_ITO) by the variation of oxygen (O₂) flow rate and N₂O surface plasma treatment. The Φ_ITO increased from 4.43 to 4.56 eV with the increase in O₂ flow rate from 0 to 4 sccm while surface treatment of N₂O plasma further enhanced the ITO work function to 4.65 eV. The crystallinity of the ITO films improved with increasing O₂ flow rate, as revealed by XRD analysis. The ITO work function was increased by the interfacial dipole resulting from the surface rich in O^- ions and by the dipole moment formed at the ITO surface during N₂O plasma treatment. The ITO films with high work functions can be used to modify the front barrier height in heterojunction with intrinsic thin layer (HIT) solar cells.

Original language	English
Pages (from-to)	9237-9241
Number of pages	5
Journal	Journal of Nanoscience and Nanotechnology
Volume	14
Issue number	12
DOIs	https://doi.org/10.1166/jnn.2014.10142
State	Published - 1 Dec 2014

Keywords

Barrier height
HIT solar cell
ITO films
NO plasma treatment
Work function
XPS

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This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1166/jnn.2014.10142

Cite this

Hussain, S. Q., Oh, W. K., Kim, S., Ahn, S., Le, A. H. T., Park, H., Lee, Y., Dao, V. A., Velumani, S., & Yi, J. (2014). Study of low resistivity and high work function ITO films prepared by oxygen flow rates and N₂O plasma treatment for amorphous/crystalline silicon heterojunction solar cells. Journal of Nanoscience and Nanotechnology, 14(12), 9237-9241. https://doi.org/10.1166/jnn.2014.10142

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title = "Study of low resistivity and high work function ITO films prepared by oxygen flow rates and N2O plasma treatment for amorphous/crystalline silicon heterojunction solar cells",

abstract = "Pulsed DC magnetron sputtered indium tin oxide (ITO) films deposited on glass substrates with lowest resistivity of 2.62 × 10-4 Ω.cm and high transmittance of about 89\% in the visible wavelength region. We report the enhancement of ITO work function (ΦITO) by the variation of oxygen (O2) flow rate and N2O surface plasma treatment. The ΦITO increased from 4.43 to 4.56 eV with the increase in O2 flow rate from 0 to 4 sccm while surface treatment of N2O plasma further enhanced the ITO work function to 4.65 eV. The crystallinity of the ITO films improved with increasing O2 flow rate, as revealed by XRD analysis. The ITO work function was increased by the interfacial dipole resulting from the surface rich in O- ions and by the dipole moment formed at the ITO surface during N2O plasma treatment. The ITO films with high work functions can be used to modify the front barrier height in heterojunction with intrinsic thin layer (HIT) solar cells.",

keywords = "Barrier height, HIT solar cell, ITO films, NO plasma treatment, Work function, XPS",

author = "Hussain, \{Shahzada Qamar\} and Oh, \{Woong Kyo\} and Sunbo Kim and Shihyun Ahn and Le, \{Anh Huy Tuan\} and Hyeongsik Park and Youngseok Lee and Dao, \{Vinh Ai\} and S. Velumani and Junsin Yi",

year = "2014",

month = dec,

day = "1",

doi = "10.1166/jnn.2014.10142",

language = "English",

volume = "14",

pages = "9237--9241",

journal = "Journal of Nanoscience and Nanotechnology",

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Hussain, SQ, Oh, WK, Kim, S, Ahn, S, Le, AHT, Park, H, Lee, Y, Dao, VA, Velumani, S & Yi, J 2014, 'Study of low resistivity and high work function ITO films prepared by oxygen flow rates and N₂O plasma treatment for amorphous/crystalline silicon heterojunction solar cells', Journal of Nanoscience and Nanotechnology, vol. 14, no. 12, pp. 9237-9241. https://doi.org/10.1166/jnn.2014.10142

Study of low resistivity and high work function ITO films prepared by oxygen flow rates and N₂O plasma treatment for amorphous/crystalline silicon heterojunction solar cells. / Hussain, Shahzada Qamar; Oh, Woong Kyo; Kim, Sunbo et al.
In: Journal of Nanoscience and Nanotechnology, Vol. 14, No. 12, 01.12.2014, p. 9237-9241.

Research output: Contribution to journal › Article › peer-review

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AU - Hussain, Shahzada Qamar

AU - Oh, Woong Kyo

AU - Kim, Sunbo

AU - Ahn, Shihyun

AU - Le, Anh Huy Tuan

AU - Park, Hyeongsik

AU - Lee, Youngseok

AU - Dao, Vinh Ai

AU - Velumani, S.

AU - Yi, Junsin

PY - 2014/12/1

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N2 - Pulsed DC magnetron sputtered indium tin oxide (ITO) films deposited on glass substrates with lowest resistivity of 2.62 × 10-4 Ω.cm and high transmittance of about 89% in the visible wavelength region. We report the enhancement of ITO work function (ΦITO) by the variation of oxygen (O2) flow rate and N2O surface plasma treatment. The ΦITO increased from 4.43 to 4.56 eV with the increase in O2 flow rate from 0 to 4 sccm while surface treatment of N2O plasma further enhanced the ITO work function to 4.65 eV. The crystallinity of the ITO films improved with increasing O2 flow rate, as revealed by XRD analysis. The ITO work function was increased by the interfacial dipole resulting from the surface rich in O- ions and by the dipole moment formed at the ITO surface during N2O plasma treatment. The ITO films with high work functions can be used to modify the front barrier height in heterojunction with intrinsic thin layer (HIT) solar cells.

AB - Pulsed DC magnetron sputtered indium tin oxide (ITO) films deposited on glass substrates with lowest resistivity of 2.62 × 10-4 Ω.cm and high transmittance of about 89% in the visible wavelength region. We report the enhancement of ITO work function (ΦITO) by the variation of oxygen (O2) flow rate and N2O surface plasma treatment. The ΦITO increased from 4.43 to 4.56 eV with the increase in O2 flow rate from 0 to 4 sccm while surface treatment of N2O plasma further enhanced the ITO work function to 4.65 eV. The crystallinity of the ITO films improved with increasing O2 flow rate, as revealed by XRD analysis. The ITO work function was increased by the interfacial dipole resulting from the surface rich in O- ions and by the dipole moment formed at the ITO surface during N2O plasma treatment. The ITO films with high work functions can be used to modify the front barrier height in heterojunction with intrinsic thin layer (HIT) solar cells.

KW - Barrier height

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KW - ITO films

KW - NO plasma treatment

KW - Work function

KW - XPS

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DO - 10.1166/jnn.2014.10142

M3 - Article

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VL - 14

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EP - 9241

JO - Journal of Nanoscience and Nanotechnology

JF - Journal of Nanoscience and Nanotechnology

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