Study of a thin Al2O3/TaN absorber stack on Ru-capped multilayers

Tae Geun Kim; Byung Hun Kim; In Yong Kang; Yong Chae Chung; Jinho Ahn; Seung Yoon Lee; In Sung Park; Chung Yong Kim; Nae Eung Lee

Study of a thin Al₂O₃/TaN absorber stack on Ru-capped multilayers

Tae Geun Kim, Byung Hun Kim, In Yong Kang, Yong Chae Chung, Jinho Ahn, Seung Yoon Lee, In Sung Park, Chung Yong Kim, Nae Eung Lee

Department of Advanced Materials Science and Engineering

Hanyang University

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

The glancing incident angle of an extreme ultraviolet lithography (EUVL) system requires minimal thickness of absorber patterns to suppress the shadow effect. High etch selectivity and low EUV reflectance can be obtained by a TaN absorber with a Ru buffer layer, but this structure does not offer enough DUV contrast (absorber/ reflector) for inspection. A 20-nm-thick Al ₂O₃ anti-reflection coating on top of 27-nm-TaN/2-nm-Ru is proposed as one of the optimum absorber stacks, which can give high EUV and DUV contrast with the thinnest structure ever reported.

Original language	English
Pages (from-to)	S721-S725
Journal	Journal of the Korean Physical Society
Volume	49
Issue number	SUPPL. 3
State	Published - Dec 2006

Keywords

Absorber
AlO
ARC
Buffer
Capping
EUVL
TaN

Cite this

@article{bdf2f98834d54164b12756eeb735e9d1,

title = "Study of a thin Al2O3/TaN absorber stack on Ru-capped multilayers",

abstract = "The glancing incident angle of an extreme ultraviolet lithography (EUVL) system requires minimal thickness of absorber patterns to suppress the shadow effect. High etch selectivity and low EUV reflectance can be obtained by a TaN absorber with a Ru buffer layer, but this structure does not offer enough DUV contrast (absorber/ reflector) for inspection. A 20-nm-thick Al 2O3 anti-reflection coating on top of 27-nm-TaN/2-nm-Ru is proposed as one of the optimum absorber stacks, which can give high EUV and DUV contrast with the thinnest structure ever reported.",

keywords = "Absorber, AlO, ARC, Buffer, Capping, EUVL, TaN",

author = "Kim, \{Tae Geun\} and Kim, \{Byung Hun\} and Kang, \{In Yong\} and Chung, \{Yong Chae\} and Jinho Ahn and Lee, \{Seung Yoon\} and Park, \{In Sung\} and Kim, \{Chung Yong\} and Lee, \{Nae Eung\}",

year = "2006",

month = dec,

language = "English",

volume = "49",

pages = "S721--S725",

journal = "Journal of the Korean Physical Society",

issn = "0374-4884",

publisher = "Korean Physical Society",

number = "SUPPL. 3",

}

TY - JOUR

T1 - Study of a thin Al2O3/TaN absorber stack on Ru-capped multilayers

AU - Kim, Tae Geun

AU - Kim, Byung Hun

AU - Kang, In Yong

AU - Chung, Yong Chae

AU - Ahn, Jinho

AU - Lee, Seung Yoon

AU - Park, In Sung

AU - Kim, Chung Yong

AU - Lee, Nae Eung

PY - 2006/12

Y1 - 2006/12

N2 - The glancing incident angle of an extreme ultraviolet lithography (EUVL) system requires minimal thickness of absorber patterns to suppress the shadow effect. High etch selectivity and low EUV reflectance can be obtained by a TaN absorber with a Ru buffer layer, but this structure does not offer enough DUV contrast (absorber/ reflector) for inspection. A 20-nm-thick Al 2O3 anti-reflection coating on top of 27-nm-TaN/2-nm-Ru is proposed as one of the optimum absorber stacks, which can give high EUV and DUV contrast with the thinnest structure ever reported.

AB - The glancing incident angle of an extreme ultraviolet lithography (EUVL) system requires minimal thickness of absorber patterns to suppress the shadow effect. High etch selectivity and low EUV reflectance can be obtained by a TaN absorber with a Ru buffer layer, but this structure does not offer enough DUV contrast (absorber/ reflector) for inspection. A 20-nm-thick Al 2O3 anti-reflection coating on top of 27-nm-TaN/2-nm-Ru is proposed as one of the optimum absorber stacks, which can give high EUV and DUV contrast with the thinnest structure ever reported.

KW - Absorber

KW - AlO

KW - ARC

KW - Buffer

KW - Capping

KW - EUVL

KW - TaN

UR - https://www.scopus.com/pages/publications/33846393589

M3 - Article

AN - SCOPUS:33846393589

SN - 0374-4884

VL - 49

SP - S721-S725

JO - Journal of the Korean Physical Society

JF - Journal of the Korean Physical Society

IS - SUPPL. 3

ER -

Study of a thin Al₂O₃/TaN absorber stack on Ru-capped multilayers

Abstract

Keywords

Other files and links

Fingerprint

Cite this