STT-MRAM Read and Write Circuit for High Reliability and Power Efficiency

Dong Kil Yun, Jung Hoon Chun

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

This paper proposes a circuit design that can improve reliability while reducing write power consumption. This circuit performs a rewrite operation if the write fails after the write operation. We can reduce power consumption by lowering the initial write current. Verification and rewrite operations improve circuit reliability by reducing the write error.

Original languageEnglish
Title of host publicationProceedings - International SoC Design Conference 2022, ISOCC 2022
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages290-291
Number of pages2
ISBN (Electronic)9781665459716
DOIs
StatePublished - 2022
Externally publishedYes
Event19th International System-on-Chip Design Conference, ISOCC 2022 - Gangneung-si, Korea, Republic of
Duration: 19 Oct 202222 Oct 2022

Publication series

NameProceedings - International SoC Design Conference 2022, ISOCC 2022

Conference

Conference19th International System-on-Chip Design Conference, ISOCC 2022
Country/TerritoryKorea, Republic of
CityGangneung-si
Period19/10/2222/10/22

Keywords

  • read-write circuit
  • reliability
  • STT-MRAM

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