Structure and ferroeletric properties of Bi modified YMnO3 films deposited on platinum electrodes

Taekjib Choi; Youngsung Kim; Jaichan Lee

doi:10.1080/713716179

Structure and ferroeletric properties of Bi modified YMnO₃ films deposited on platinum electrodes

Taekjib Choi, Youngsung Kim, Jaichan Lee

Department of Advanced Materials Science and Engineering

Sungkyunkwan University

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

Bi modified YMnO 3 : (Y 0.95 ,Bi 0.05 )MnO 3 (YBM) thin films were deposited on Pt/Ti/SiO 2 /Si (100) substrates by pulsed laser deposition (PLD). The deposition conditions of oxygen partial pressure and cooling atmosphere have influences on the structural and ferroelectric properties of YBM thin films. Addition of Bi in YMnO 3 enhanced crystallization of YMnO 3 thin films. The c-axis oriented YBM thin films have been obtained on Pt at 700 C, which is lower than the typical deposition temperature of YMnO 3 thin films. YBM thin films deposited in oxygen partial pressure of 100 mTorr were strongly oriented along the c-axis. The hysteresis P-E loop and Capacitance-Frequency (C-F) characteristics of YBM thin films were studied. The dielectric constant and loss was 29 and 0.017 at 1 MHz, respectively.

Original language	English
Pages (from-to)	15-20
Number of pages	6
Journal	Ferroelectrics
Volume	271
DOIs	https://doi.org/10.1080/713716179
State	Published - 1 Jan 2002

Keywords

(Y,Bi )MnO
Crystallization
Ferroelectric
PLD

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10.1080/713716179

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title = "Structure and ferroeletric properties of Bi modified YMnO3 films deposited on platinum electrodes",

abstract = "Bi modified YMnO 3 : (Y 0.95 ,Bi 0.05 )MnO 3 (YBM) thin films were deposited on Pt/Ti/SiO 2 /Si (100) substrates by pulsed laser deposition (PLD). The deposition conditions of oxygen partial pressure and cooling atmosphere have influences on the structural and ferroelectric properties of YBM thin films. Addition of Bi in YMnO 3 enhanced crystallization of YMnO 3 thin films. The c-axis oriented YBM thin films have been obtained on Pt at 700 C, which is lower than the typical deposition temperature of YMnO 3 thin films. YBM thin films deposited in oxygen partial pressure of 100 mTorr were strongly oriented along the c-axis. The hysteresis P-E loop and Capacitance-Frequency (C-F) characteristics of YBM thin films were studied. The dielectric constant and loss was 29 and 0.017 at 1 MHz, respectively.",

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T1 - Structure and ferroeletric properties of Bi modified YMnO3 films deposited on platinum electrodes

AU - Choi, Taekjib

AU - Kim, Youngsung

AU - Lee, Jaichan

PY - 2002/1/1

Y1 - 2002/1/1

N2 - Bi modified YMnO 3 : (Y 0.95 ,Bi 0.05 )MnO 3 (YBM) thin films were deposited on Pt/Ti/SiO 2 /Si (100) substrates by pulsed laser deposition (PLD). The deposition conditions of oxygen partial pressure and cooling atmosphere have influences on the structural and ferroelectric properties of YBM thin films. Addition of Bi in YMnO 3 enhanced crystallization of YMnO 3 thin films. The c-axis oriented YBM thin films have been obtained on Pt at 700 C, which is lower than the typical deposition temperature of YMnO 3 thin films. YBM thin films deposited in oxygen partial pressure of 100 mTorr were strongly oriented along the c-axis. The hysteresis P-E loop and Capacitance-Frequency (C-F) characteristics of YBM thin films were studied. The dielectric constant and loss was 29 and 0.017 at 1 MHz, respectively.

AB - Bi modified YMnO 3 : (Y 0.95 ,Bi 0.05 )MnO 3 (YBM) thin films were deposited on Pt/Ti/SiO 2 /Si (100) substrates by pulsed laser deposition (PLD). The deposition conditions of oxygen partial pressure and cooling atmosphere have influences on the structural and ferroelectric properties of YBM thin films. Addition of Bi in YMnO 3 enhanced crystallization of YMnO 3 thin films. The c-axis oriented YBM thin films have been obtained on Pt at 700 C, which is lower than the typical deposition temperature of YMnO 3 thin films. YBM thin films deposited in oxygen partial pressure of 100 mTorr were strongly oriented along the c-axis. The hysteresis P-E loop and Capacitance-Frequency (C-F) characteristics of YBM thin films were studied. The dielectric constant and loss was 29 and 0.017 at 1 MHz, respectively.

KW - (Y,Bi )MnO

KW - Crystallization

KW - Ferroelectric

KW - PLD

UR - https://www.scopus.com/pages/publications/33746300533

U2 - 10.1080/713716179

DO - 10.1080/713716179

M3 - Article

AN - SCOPUS:33746300533

SN - 0015-0193

VL - 271

SP - 15

EP - 20

JO - Ferroelectrics

JF - Ferroelectrics

ER -

Structure and ferroeletric properties of Bi modified YMnO₃ films deposited on platinum electrodes

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