Structural properties of titanium dioxide films grown on p-Si by metal-organic chemical vapor deposition at low temperature

Y. S. Yoon; W. N. Kang; S. S. Yom; T. W. Kim; M. Jung; T. H. Park; K. Y. Seo; Yong Lee Jong Yong Lee

doi:10.1016/0040-6090(94)90640-8

Structural properties of titanium dioxide films grown on p-Si by metal-organic chemical vapor deposition at low temperature

Y. S. Yoon, W. N. Kang, S. S. Yom, T. W. Kim, M. Jung, T. H. Park, K. Y. Seo, Yong Lee Jong Yong Lee

Research output: Contribution to journal › Article › peer-review

18 Scopus citations

Abstract

Metal-organic chemical vapor deposition of TiO₂ via pyrolysis using Ti (OC₃H₇)₄ and N₂O was investigated with the goal of producing TiO₂ epitaxial films on p-Si(100) substrates. X-ray diffraction analysis showed that the grown TiO₂ layer was a polycrystalline film. Auger depth profiles demonstrated that the TiO₂/Si interface was relatively abrupt, and transmission electron microscopy verified the formation of an interfacial layer in the TiO₂/Si interface and the formation of a polycrystalline TiO₂ thin film. These results indicate that the failure to form the TiO₂ epitaxial films originated from the formation of an interfacial amorphous layer at the initial growth stage.

Original language	English
Pages (from-to)	12-14
Number of pages	3
Journal	Thin Solid Films
Volume	238
Issue number	1
DOIs	https://doi.org/10.1016/0040-6090(94)90640-8
State	Published - 15 Jan 1994
Externally published	Yes

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title = "Structural properties of titanium dioxide films grown on p-Si by metal-organic chemical vapor deposition at low temperature",

abstract = "Metal-organic chemical vapor deposition of TiO2 via pyrolysis using Ti (OC3H7)4 and N2O was investigated with the goal of producing TiO2 epitaxial films on p-Si(100) substrates. X-ray diffraction analysis showed that the grown TiO2 layer was a polycrystalline film. Auger depth profiles demonstrated that the TiO2/Si interface was relatively abrupt, and transmission electron microscopy verified the formation of an interfacial layer in the TiO2/Si interface and the formation of a polycrystalline TiO2 thin film. These results indicate that the failure to form the TiO2 epitaxial films originated from the formation of an interfacial amorphous layer at the initial growth stage.",

author = "Yoon, \{Y. S.\} and Kang, \{W. N.\} and Yom, \{S. S.\} and Kim, \{T. W.\} and M. Jung and Park, \{T. H.\} and Seo, \{K. Y.\} and \{Jong Yong Lee\}, \{Yong Lee\}",

year = "1994",

month = jan,

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doi = "10.1016/0040-6090(94)90640-8",

language = "English",

volume = "238",

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TY - JOUR

T1 - Structural properties of titanium dioxide films grown on p-Si by metal-organic chemical vapor deposition at low temperature

AU - Yoon, Y. S.

AU - Kang, W. N.

AU - Yom, S. S.

AU - Kim, T. W.

AU - Jung, M.

AU - Park, T. H.

AU - Seo, K. Y.

AU - Jong Yong Lee, Yong Lee

PY - 1994/1/15

Y1 - 1994/1/15

N2 - Metal-organic chemical vapor deposition of TiO2 via pyrolysis using Ti (OC3H7)4 and N2O was investigated with the goal of producing TiO2 epitaxial films on p-Si(100) substrates. X-ray diffraction analysis showed that the grown TiO2 layer was a polycrystalline film. Auger depth profiles demonstrated that the TiO2/Si interface was relatively abrupt, and transmission electron microscopy verified the formation of an interfacial layer in the TiO2/Si interface and the formation of a polycrystalline TiO2 thin film. These results indicate that the failure to form the TiO2 epitaxial films originated from the formation of an interfacial amorphous layer at the initial growth stage.

AB - Metal-organic chemical vapor deposition of TiO2 via pyrolysis using Ti (OC3H7)4 and N2O was investigated with the goal of producing TiO2 epitaxial films on p-Si(100) substrates. X-ray diffraction analysis showed that the grown TiO2 layer was a polycrystalline film. Auger depth profiles demonstrated that the TiO2/Si interface was relatively abrupt, and transmission electron microscopy verified the formation of an interfacial layer in the TiO2/Si interface and the formation of a polycrystalline TiO2 thin film. These results indicate that the failure to form the TiO2 epitaxial films originated from the formation of an interfacial amorphous layer at the initial growth stage.

UR - https://www.scopus.com/pages/publications/0028320098

U2 - 10.1016/0040-6090(94)90640-8

DO - 10.1016/0040-6090(94)90640-8

M3 - Article

AN - SCOPUS:0028320098

SN - 0040-6090

VL - 238

SP - 12

EP - 14

JO - Thin Solid Films

JF - Thin Solid Films

IS - 1

ER -

Structural properties of titanium dioxide films grown on p-Si by metal-organic chemical vapor deposition at low temperature

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