Structural and optical properties of InGaN/GaN triangular-shaped quantum wells with different emission wavelengths

R. J. Choi; B. K. Lee; H. W. Shim; D. S. Kang; E. K. Suh; C. H. Hong; H. J. Lee; Y. B. Hahn; H. K. Cho

doi:10.1002/pssc.200303553

Structural and optical properties of InGaN/GaN triangular-shaped quantum wells with different emission wavelengths

R. J. Choi
, B. K. Lee
, H. W. Shim
, D. S. Kang
, E. K. Suh
, C. H. Hong
, H. J. Lee
, Y. B. Hahn
, H. K. Cho

Jeonbuk National University
Dong-A University

Research output: Contribution to journal › Conference article › peer-review

1 Scopus citations

Abstract

We investigated the structural and optical properties of InGaN/GaN triangular-shaped multiple quantum well (MQW) structures as a function of emission wavelengths. As the peak wavelength became longer, the average In composition increased linearly and the peak linewidth in the PL measurements became broad. Also, the PL intensity showed the highest value at 23% In and the interface showed the best abruptness, but the lowest intensity at 30% In. A decrease in emission intensity is ascribed to the crystalline imperfection such as defects and/or impurities caused by increased misfit strain in the QW regions with relatively higher In composition.

Original language	English
Pages (from-to)	2703-2706
Number of pages	4
Journal	Physica Status Solidi C: Conferences
Issue number	7
DOIs	https://doi.org/10.1002/pssc.200303553
State	Published - 2003
Externally published	Yes
Event	5th International Conference on Nitride Semiconductors, ICNS 2003 - Nara, Japan Duration: 25 May 2003 → 30 May 2003

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10.1002/pssc.200303553

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@article{84c741a2b72c4bf0b143ac8504f3466c,

title = "Structural and optical properties of InGaN/GaN triangular-shaped quantum wells with different emission wavelengths",

abstract = "We investigated the structural and optical properties of InGaN/GaN triangular-shaped multiple quantum well (MQW) structures as a function of emission wavelengths. As the peak wavelength became longer, the average In composition increased linearly and the peak linewidth in the PL measurements became broad. Also, the PL intensity showed the highest value at 23\% In and the interface showed the best abruptness, but the lowest intensity at 30\% In. A decrease in emission intensity is ascribed to the crystalline imperfection such as defects and/or impurities caused by increased misfit strain in the QW regions with relatively higher In composition.",

author = "Choi, \{R. J.\} and Lee, \{B. K.\} and Shim, \{H. W.\} and Kang, \{D. S.\} and Suh, \{E. K.\} and Hong, \{C. H.\} and Lee, \{H. J.\} and Hahn, \{Y. B.\} and Cho, \{H. K.\}",

year = "2003",

doi = "10.1002/pssc.200303553",

language = "English",

pages = "2703--2706",

journal = "Physica Status Solidi C: Conferences",

issn = "1610-1634",

publisher = "Wiley-VCH Verlag",

number = "7",

note = "5th International Conference on Nitride Semiconductors, ICNS 2003 ; Conference date: 25-05-2003 Through 30-05-2003",

}

TY - JOUR

T1 - Structural and optical properties of InGaN/GaN triangular-shaped quantum wells with different emission wavelengths

AU - Choi, R. J.

AU - Lee, B. K.

AU - Shim, H. W.

AU - Kang, D. S.

AU - Suh, E. K.

AU - Hong, C. H.

AU - Lee, H. J.

AU - Hahn, Y. B.

AU - Cho, H. K.

PY - 2003

Y1 - 2003

N2 - We investigated the structural and optical properties of InGaN/GaN triangular-shaped multiple quantum well (MQW) structures as a function of emission wavelengths. As the peak wavelength became longer, the average In composition increased linearly and the peak linewidth in the PL measurements became broad. Also, the PL intensity showed the highest value at 23% In and the interface showed the best abruptness, but the lowest intensity at 30% In. A decrease in emission intensity is ascribed to the crystalline imperfection such as defects and/or impurities caused by increased misfit strain in the QW regions with relatively higher In composition.

AB - We investigated the structural and optical properties of InGaN/GaN triangular-shaped multiple quantum well (MQW) structures as a function of emission wavelengths. As the peak wavelength became longer, the average In composition increased linearly and the peak linewidth in the PL measurements became broad. Also, the PL intensity showed the highest value at 23% In and the interface showed the best abruptness, but the lowest intensity at 30% In. A decrease in emission intensity is ascribed to the crystalline imperfection such as defects and/or impurities caused by increased misfit strain in the QW regions with relatively higher In composition.

UR - https://www.scopus.com/pages/publications/84875089341

U2 - 10.1002/pssc.200303553

DO - 10.1002/pssc.200303553

M3 - Conference article

AN - SCOPUS:84875089341

SN - 1610-1634

SP - 2703

EP - 2706

JO - Physica Status Solidi C: Conferences

JF - Physica Status Solidi C: Conferences

IS - 7

T2 - 5th International Conference on Nitride Semiconductors, ICNS 2003

Y2 - 25 May 2003 through 30 May 2003

ER -

Structural and optical properties of InGaN/GaN triangular-shaped quantum wells with different emission wavelengths

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