Structural and energy bandgap modification of chemically synthesized Cd(Zn, Cu)Se thin films

G. T. Chavan; S. S. Kamble; F. A. Sabah; V. M. Prakshale; A. T. Yadav; N. B. Chaure; Eun Chel Cho; Junsin Yi; L. P. Deshmukh

doi:10.1016/j.cplett.2019.136990

Structural and energy bandgap modification of chemically synthesized Cd(Zn, Cu)Se thin films

G. T. Chavan
, S. S. Kamble
, F. A. Sabah
, V. M. Prakshale
, A. T. Yadav
, N. B. Chaure
, Eun Chel Cho
, Junsin Yi
, L. P. Deshmukh

Department of Electronic and Electrical Engineering

Research output: Contribution to journal › Article › peer-review

16 Scopus citations

Abstract

In this letter, Cd_1-_x_-_yZn_xCu_ySe (0.025 ≤ x = y ≤ 0.15) thin films were deposited by a chemical route. As-deposited thin films were characterized for the structural, morphological compositional and optoelectronic studies. X-ray diffraction confirmed the formation of polycrystalline thin films with a mixed crystal structure. Compositional analysis indicated the substitution of Cd²⁺ ions by Zn²⁺ and Cu²⁺. As-grown semiconductor thin films revealed p-type conductivity with a high absorption coefficient (≈10⁵ cm⁻¹). The energy bandgap was modified from 2.09 eV to 2.33 eV by Zn and Cu addition into the CdSe host.

Original language	English
Article number	136990
Journal	Chemical Physics Letters
Volume	739
DOIs	https://doi.org/10.1016/j.cplett.2019.136990
State	Published - Jan 2020

Keywords

Bandgap
Chalcogenide
Hall effect
XRD

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1016/j.cplett.2019.136990

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@article{ed729b8280ae4a9a848ddc0347c13eac,

title = "Structural and energy bandgap modification of chemically synthesized Cd(Zn, Cu)Se thin films",

abstract = "In this letter, Cd1-x-yZnxCuySe (0.025 ≤ x = y ≤ 0.15) thin films were deposited by a chemical route. As-deposited thin films were characterized for the structural, morphological compositional and optoelectronic studies. X-ray diffraction confirmed the formation of polycrystalline thin films with a mixed crystal structure. Compositional analysis indicated the substitution of Cd2+ ions by Zn2+ and Cu2+. As-grown semiconductor thin films revealed p-type conductivity with a high absorption coefficient (≈105 cm−1). The energy bandgap was modified from 2.09 eV to 2.33 eV by Zn and Cu addition into the CdSe host.",

keywords = "Bandgap, Chalcogenide, Hall effect, XRD",

author = "Chavan, \{G. T.\} and Kamble, \{S. S.\} and Sabah, \{F. A.\} and Prakshale, \{V. M.\} and Yadav, \{A. T.\} and Chaure, \{N. B.\} and Cho, \{Eun Chel\} and Junsin Yi and Deshmukh, \{L. P.\}",

note = "Publisher Copyright: {\textcopyright} 2019 Elsevier B.V.",

year = "2020",

month = jan,

doi = "10.1016/j.cplett.2019.136990",

language = "English",

volume = "739",

journal = "Chemical Physics Letters",

issn = "0009-2614",

publisher = "Elsevier B.V.",

}

TY - JOUR

T1 - Structural and energy bandgap modification of chemically synthesized Cd(Zn, Cu)Se thin films

AU - Chavan, G. T.

AU - Kamble, S. S.

AU - Sabah, F. A.

AU - Prakshale, V. M.

AU - Yadav, A. T.

AU - Chaure, N. B.

AU - Cho, Eun Chel

AU - Yi, Junsin

AU - Deshmukh, L. P.

PY - 2020/1

Y1 - 2020/1

N2 - In this letter, Cd1-x-yZnxCuySe (0.025 ≤ x = y ≤ 0.15) thin films were deposited by a chemical route. As-deposited thin films were characterized for the structural, morphological compositional and optoelectronic studies. X-ray diffraction confirmed the formation of polycrystalline thin films with a mixed crystal structure. Compositional analysis indicated the substitution of Cd2+ ions by Zn2+ and Cu2+. As-grown semiconductor thin films revealed p-type conductivity with a high absorption coefficient (≈105 cm−1). The energy bandgap was modified from 2.09 eV to 2.33 eV by Zn and Cu addition into the CdSe host.

AB - In this letter, Cd1-x-yZnxCuySe (0.025 ≤ x = y ≤ 0.15) thin films were deposited by a chemical route. As-deposited thin films were characterized for the structural, morphological compositional and optoelectronic studies. X-ray diffraction confirmed the formation of polycrystalline thin films with a mixed crystal structure. Compositional analysis indicated the substitution of Cd2+ ions by Zn2+ and Cu2+. As-grown semiconductor thin films revealed p-type conductivity with a high absorption coefficient (≈105 cm−1). The energy bandgap was modified from 2.09 eV to 2.33 eV by Zn and Cu addition into the CdSe host.

KW - Bandgap

KW - Chalcogenide

KW - Hall effect

KW - XRD

UR - https://www.scopus.com/pages/publications/85075882533

U2 - 10.1016/j.cplett.2019.136990

DO - 10.1016/j.cplett.2019.136990

M3 - Article

AN - SCOPUS:85075882533

SN - 0009-2614

VL - 739

JO - Chemical Physics Letters

JF - Chemical Physics Letters

M1 - 136990

ER -

Structural and energy bandgap modification of chemically synthesized Cd(Zn, Cu)Se thin films

Abstract

Keywords

UN SDGs

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