Structural and electrical properties of low resistance Pt/Pd/Au contact on p-GaN

Young Soo Yoon; Han Ki Kim

doi:10.1007/s10832-006-7729-7

Structural and electrical properties of low resistance Pt/Pd/Au contact on p-GaN

Young Soo Yoon, Han Ki Kim

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

We have investigated electrical and structural properties of Pt/Pd/Au ohmic contact on p-type GaN:Mg (2.5 × 10¹⁷ cm^-3) using Auger electron spectroscopy (AES) and glancing angle x-ray diffraction (GXRD) analysis. It was shown that the specific contact resistivity improved with increasing annealing temperature. The annealing of the contact at 600°C for 2 min in flowing N₂ atmosphere resulted in a specific contact resistivity of 3.1 × 10^-5 Ω cm². Both GXRD and AES depth profile results show that Ga₃Pt₅, Ga ₂Pd₅, and Au₇Ga₂ phases are formed at the interface region between metal and GaN when annealed at temperatures 600°C. Possible explanation is suggested to describe the annealing dependence of the specific contact resistivity of the Pt/Pd/Au contacts.

Original language	English
Pages (from-to)	277-281
Number of pages	5
Journal	Journal of Electroceramics
Volume	17
Issue number	2-4
DOIs	https://doi.org/10.1007/s10832-006-7729-7
State	Published - Dec 2006
Externally published	Yes

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title = "Structural and electrical properties of low resistance Pt/Pd/Au contact on p-GaN",

abstract = "We have investigated electrical and structural properties of Pt/Pd/Au ohmic contact on p-type GaN:Mg (2.5 × 1017 cm-3) using Auger electron spectroscopy (AES) and glancing angle x-ray diffraction (GXRD) analysis. It was shown that the specific contact resistivity improved with increasing annealing temperature. The annealing of the contact at 600°C for 2 min in flowing N2 atmosphere resulted in a specific contact resistivity of 3.1 × 10-5 Ω cm2. Both GXRD and AES depth profile results show that Ga3Pt5, Ga 2Pd5, and Au7Ga2 phases are formed at the interface region between metal and GaN when annealed at temperatures 600°C. Possible explanation is suggested to describe the annealing dependence of the specific contact resistivity of the Pt/Pd/Au contacts.",

author = "Yoon, \{Young Soo\} and Kim, \{Han Ki\}",

year = "2006",

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doi = "10.1007/s10832-006-7729-7",

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journal = "Journal of Electroceramics",

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T1 - Structural and electrical properties of low resistance Pt/Pd/Au contact on p-GaN

AU - Yoon, Young Soo

AU - Kim, Han Ki

PY - 2006/12

Y1 - 2006/12

N2 - We have investigated electrical and structural properties of Pt/Pd/Au ohmic contact on p-type GaN:Mg (2.5 × 1017 cm-3) using Auger electron spectroscopy (AES) and glancing angle x-ray diffraction (GXRD) analysis. It was shown that the specific contact resistivity improved with increasing annealing temperature. The annealing of the contact at 600°C for 2 min in flowing N2 atmosphere resulted in a specific contact resistivity of 3.1 × 10-5 Ω cm2. Both GXRD and AES depth profile results show that Ga3Pt5, Ga 2Pd5, and Au7Ga2 phases are formed at the interface region between metal and GaN when annealed at temperatures 600°C. Possible explanation is suggested to describe the annealing dependence of the specific contact resistivity of the Pt/Pd/Au contacts.

AB - We have investigated electrical and structural properties of Pt/Pd/Au ohmic contact on p-type GaN:Mg (2.5 × 1017 cm-3) using Auger electron spectroscopy (AES) and glancing angle x-ray diffraction (GXRD) analysis. It was shown that the specific contact resistivity improved with increasing annealing temperature. The annealing of the contact at 600°C for 2 min in flowing N2 atmosphere resulted in a specific contact resistivity of 3.1 × 10-5 Ω cm2. Both GXRD and AES depth profile results show that Ga3Pt5, Ga 2Pd5, and Au7Ga2 phases are formed at the interface region between metal and GaN when annealed at temperatures 600°C. Possible explanation is suggested to describe the annealing dependence of the specific contact resistivity of the Pt/Pd/Au contacts.

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SN - 1385-3449

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EP - 281

JO - Journal of Electroceramics

JF - Journal of Electroceramics

IS - 2-4

ER -

Structural and electrical properties of low resistance Pt/Pd/Au contact on p-GaN

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