Abstract
BaTiO3 (BTO)/SrTiO3 (STO) artificial superlattices were deposited by pulsed laser deposition (PLD) on MgO (100) and SrTiO 3 (100) single crystal substrates. The stacking periodicity of the superlattice was varied from one unit cell to 125 unit cell thickness. The BTO/STO superlattice has epitaxial layers of BTO and STO with parallel crystallographic orientation to MgO (100) and SrTiO3 (100) substrates. The BTO and STO layers were strained by the lattice mismatch between the BTO and STO layers. The lattice distortion and correspondingly dielectric constant of the BTO/STO superlattice increased with decreasing the stacking periodicity of the superlattice within the critical thickness (∼ 20 nm or BTO25/STO25 period). The BTO/STO superlattice with a maximum dielectric constant of 1230 was obtained at a stacking periodicity of BTO2 unit cell/STO2 unit cell, which was possible by the control of lattice distortions of BTO and STO layers in the artificial superlattice.
| Original language | English |
|---|---|
| Pages (from-to) | 219-228 |
| Number of pages | 10 |
| Journal | Integrated Ferroelectrics |
| Volume | 50 |
| DOIs | |
| State | Published - 2002 |
Keywords
- Artificial superlattice
- BaTiO
- Dielectric constant
- Lattice distortion
- SrTiO