Structural and dielectric properties of artificial PbZrO 3/PbTiO3 superlattices grown by pulsed laser deposition

Taekjib Choi; Jaichan Lee

doi:10.1016/j.tsf.2004.07.024

Structural and dielectric properties of artificial PbZrO ₃/PbTiO₃ superlattices grown by pulsed laser deposition

Taekjib Choi
, Jaichan Lee

Department of Advanced Materials Science and Engineering

Sungkyunkwan University

Research output: Contribution to journal › Article › peer-review

29 Scopus citations

Abstract

PbZrO₃ (PZO)/PbTiO₃ (PTO) artificial superlattices were fabricated by pulsed laser deposition, and their structural and dielectric properties were investigated. Epitaxial PbTiO₃ (PTO) and PbZrO ₃ (PZO) layers were alternately deposited on La_0.5Sr _0.5CoO₃ (LSCO) (100)/MgO (100) substrate at 500 °C with various stacking periods from 1 to 100 unit cells. The (100) plane spacing (d₁₀₀) of the superlattices increased with decreasing the stacking period, and the corresponding dielectric constant was drastically improved. The dielectric constant of the superlattice reached 800 at a stacking period of 1 unit cell/1 unit cell (PZO₁/PTO₁). With small stacking periods (PZO₁/PTO₁ and PZO₂/PTO₂ unit cells), superlattices exhibited the capacitance-voltage hysteresis, i.e., ferroelectric behavior.

Original language	English
Pages (from-to)	283-286
Number of pages	4
Journal	Thin Solid Films
Volume	475
Issue number	1-2 SPEC. ISS.
DOIs	https://doi.org/10.1016/j.tsf.2004.07.024
State	Published - 22 Mar 2005

Keywords

Ferroelectric
Large dielectric constant
Pulsed laser deposition
PZO/PTO artificial superlattices

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10.1016/j.tsf.2004.07.024

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title = "Structural and dielectric properties of artificial PbZrO 3/PbTiO3 superlattices grown by pulsed laser deposition",

abstract = "PbZrO3 (PZO)/PbTiO3 (PTO) artificial superlattices were fabricated by pulsed laser deposition, and their structural and dielectric properties were investigated. Epitaxial PbTiO3 (PTO) and PbZrO 3 (PZO) layers were alternately deposited on La0.5Sr 0.5CoO3 (LSCO) (100)/MgO (100) substrate at 500 °C with various stacking periods from 1 to 100 unit cells. The (100) plane spacing (d100) of the superlattices increased with decreasing the stacking period, and the corresponding dielectric constant was drastically improved. The dielectric constant of the superlattice reached 800 at a stacking period of 1 unit cell/1 unit cell (PZO1/PTO1). With small stacking periods (PZO1/PTO1 and PZO2/PTO2 unit cells), superlattices exhibited the capacitance-voltage hysteresis, i.e., ferroelectric behavior.",

keywords = "Ferroelectric, Large dielectric constant, Pulsed laser deposition, PZO/PTO artificial superlattices",

author = "Taekjib Choi and Jaichan Lee",

year = "2005",

month = mar,

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doi = "10.1016/j.tsf.2004.07.024",

language = "English",

volume = "475",

pages = "283--286",

journal = "Thin Solid Films",

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TY - JOUR

T1 - Structural and dielectric properties of artificial PbZrO 3/PbTiO3 superlattices grown by pulsed laser deposition

AU - Choi, Taekjib

AU - Lee, Jaichan

PY - 2005/3/22

Y1 - 2005/3/22

N2 - PbZrO3 (PZO)/PbTiO3 (PTO) artificial superlattices were fabricated by pulsed laser deposition, and their structural and dielectric properties were investigated. Epitaxial PbTiO3 (PTO) and PbZrO 3 (PZO) layers were alternately deposited on La0.5Sr 0.5CoO3 (LSCO) (100)/MgO (100) substrate at 500 °C with various stacking periods from 1 to 100 unit cells. The (100) plane spacing (d100) of the superlattices increased with decreasing the stacking period, and the corresponding dielectric constant was drastically improved. The dielectric constant of the superlattice reached 800 at a stacking period of 1 unit cell/1 unit cell (PZO1/PTO1). With small stacking periods (PZO1/PTO1 and PZO2/PTO2 unit cells), superlattices exhibited the capacitance-voltage hysteresis, i.e., ferroelectric behavior.

AB - PbZrO3 (PZO)/PbTiO3 (PTO) artificial superlattices were fabricated by pulsed laser deposition, and their structural and dielectric properties were investigated. Epitaxial PbTiO3 (PTO) and PbZrO 3 (PZO) layers were alternately deposited on La0.5Sr 0.5CoO3 (LSCO) (100)/MgO (100) substrate at 500 °C with various stacking periods from 1 to 100 unit cells. The (100) plane spacing (d100) of the superlattices increased with decreasing the stacking period, and the corresponding dielectric constant was drastically improved. The dielectric constant of the superlattice reached 800 at a stacking period of 1 unit cell/1 unit cell (PZO1/PTO1). With small stacking periods (PZO1/PTO1 and PZO2/PTO2 unit cells), superlattices exhibited the capacitance-voltage hysteresis, i.e., ferroelectric behavior.

KW - Ferroelectric

KW - Large dielectric constant

KW - Pulsed laser deposition

KW - PZO/PTO artificial superlattices

UR - https://www.scopus.com/pages/publications/13444273198

U2 - 10.1016/j.tsf.2004.07.024

DO - 10.1016/j.tsf.2004.07.024

M3 - Article

AN - SCOPUS:13444273198

SN - 0040-6090

VL - 475

SP - 283

EP - 286

JO - Thin Solid Films

JF - Thin Solid Films

IS - 1-2 SPEC. ISS.

ER -

Structural and dielectric properties of artificial PbZrO ₃/PbTiO₃ superlattices grown by pulsed laser deposition

Abstract

Keywords

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