Strain relaxation behavior of the InGaN/GaN multiple quantum wells observed by transmission electron microscopy

H. K. Cho; J. Y. Lee; J. Y. Leem

doi:10.1016/S0169-4332(03)00884-5

Strain relaxation behavior of the InGaN/GaN multiple quantum wells observed by transmission electron microscopy

H. K. Cho, J. Y. Lee, J. Y. Leem

Research output: Contribution to journal › Article › peer-review

15 Scopus citations

Abstract

We have investigated the strain relaxation behavior of InGaN/GaN multiple quantum wells (MQWs) with high indium composition using transmission electron microscopy (TEM). We found that the position of the main emission peak in the MQWs with indium content of more than the critical composition is significantly affected by the increase in the number of quantum wells (QWs). From high-resolution TEM (HRTEM) and energy dispersive X-ray spectroscopy (EDX), the redshift by the increase of QW numbers originates from the increase of indium segregation in the MQWs, and dislocations and stacking faults may enhance the formation of the indium segregation.

Original language	English
Pages (from-to)	288-292
Number of pages	5
Journal	Applied Surface Science
Volume	221
Issue number	1-4
DOIs	https://doi.org/10.1016/S0169-4332(03)00884-5
State	Published - 15 Jan 2004
Externally published	Yes

Keywords

MQW
Strain relaxation
Transmission electron microscopy

Access to Document

10.1016/S0169-4332(03)00884-5

Cite this

@article{2aaad3349db046e89ca867bd19307d65,

title = "Strain relaxation behavior of the InGaN/GaN multiple quantum wells observed by transmission electron microscopy",

abstract = "We have investigated the strain relaxation behavior of InGaN/GaN multiple quantum wells (MQWs) with high indium composition using transmission electron microscopy (TEM). We found that the position of the main emission peak in the MQWs with indium content of more than the critical composition is significantly affected by the increase in the number of quantum wells (QWs). From high-resolution TEM (HRTEM) and energy dispersive X-ray spectroscopy (EDX), the redshift by the increase of QW numbers originates from the increase of indium segregation in the MQWs, and dislocations and stacking faults may enhance the formation of the indium segregation.",

keywords = "MQW, Strain relaxation, Transmission electron microscopy",

author = "Cho, \{H. K.\} and Lee, \{J. Y.\} and Leem, \{J. Y.\}",

year = "2004",

month = jan,

day = "15",

doi = "10.1016/S0169-4332(03)00884-5",

language = "English",

volume = "221",

pages = "288--292",

journal = "Applied Surface Science",

issn = "0169-4332",

publisher = "Elsevier B.V.",

number = "1-4",

}

TY - JOUR

T1 - Strain relaxation behavior of the InGaN/GaN multiple quantum wells observed by transmission electron microscopy

AU - Cho, H. K.

AU - Lee, J. Y.

AU - Leem, J. Y.

PY - 2004/1/15

Y1 - 2004/1/15

N2 - We have investigated the strain relaxation behavior of InGaN/GaN multiple quantum wells (MQWs) with high indium composition using transmission electron microscopy (TEM). We found that the position of the main emission peak in the MQWs with indium content of more than the critical composition is significantly affected by the increase in the number of quantum wells (QWs). From high-resolution TEM (HRTEM) and energy dispersive X-ray spectroscopy (EDX), the redshift by the increase of QW numbers originates from the increase of indium segregation in the MQWs, and dislocations and stacking faults may enhance the formation of the indium segregation.

AB - We have investigated the strain relaxation behavior of InGaN/GaN multiple quantum wells (MQWs) with high indium composition using transmission electron microscopy (TEM). We found that the position of the main emission peak in the MQWs with indium content of more than the critical composition is significantly affected by the increase in the number of quantum wells (QWs). From high-resolution TEM (HRTEM) and energy dispersive X-ray spectroscopy (EDX), the redshift by the increase of QW numbers originates from the increase of indium segregation in the MQWs, and dislocations and stacking faults may enhance the formation of the indium segregation.

KW - MQW

KW - Strain relaxation

KW - Transmission electron microscopy

UR - https://www.scopus.com/pages/publications/0344740950

U2 - 10.1016/S0169-4332(03)00884-5

DO - 10.1016/S0169-4332(03)00884-5

M3 - Article

AN - SCOPUS:0344740950

SN - 0169-4332

VL - 221

SP - 288

EP - 292

JO - Applied Surface Science

JF - Applied Surface Science

IS - 1-4

ER -

Strain relaxation behavior of the InGaN/GaN multiple quantum wells observed by transmission electron microscopy

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this