Strain characterization of fin-shaped field effect transistors with SiGe stressors using nanobeam electron diffraction

Sun Wook Kim; Dae Seop Byeon; Hyunchul Jang; Sang Mo Koo; Hoo Jeong Lee; Dae Hong Ko

doi:10.1063/1.4893926

Strain characterization of fin-shaped field effect transistors with SiGe stressors using nanobeam electron diffraction

Sun Wook Kim
, Dae Seop Byeon
, Hyunchul Jang
, Sang Mo Koo
, Hoo Jeong Lee
, Dae Hong Ko

Department of Advanced Materials Science and Engineering

Yonsei University

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

This study undertook strain analysis on fin-shaped field effect transistor structures with epitaxial Si_1-xGe_x stressors, using nano-beam electron diffraction and finite elements method. Combining the two methods disclosed dynamic strain distribution in the source/drain and channel region of the fin structure, and the effects of dimensional factors such as the stressor thickness and fin width, offering valuable information for device design.

Original language	English
Article number	083104
Journal	Applied Physics Letters
Volume	105
Issue number	8
DOIs	https://doi.org/10.1063/1.4893926
State	Published - 25 Aug 2014

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title = "Strain characterization of fin-shaped field effect transistors with SiGe stressors using nanobeam electron diffraction",

abstract = "This study undertook strain analysis on fin-shaped field effect transistor structures with epitaxial Si1-xGex stressors, using nano-beam electron diffraction and finite elements method. Combining the two methods disclosed dynamic strain distribution in the source/drain and channel region of the fin structure, and the effects of dimensional factors such as the stressor thickness and fin width, offering valuable information for device design.",

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doi = "10.1063/1.4893926",

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AU - Kim, Sun Wook

AU - Byeon, Dae Seop

AU - Jang, Hyunchul

AU - Koo, Sang Mo

AU - Lee, Hoo Jeong

AU - Ko, Dae Hong

PY - 2014/8/25

Y1 - 2014/8/25

N2 - This study undertook strain analysis on fin-shaped field effect transistor structures with epitaxial Si1-xGex stressors, using nano-beam electron diffraction and finite elements method. Combining the two methods disclosed dynamic strain distribution in the source/drain and channel region of the fin structure, and the effects of dimensional factors such as the stressor thickness and fin width, offering valuable information for device design.

AB - This study undertook strain analysis on fin-shaped field effect transistor structures with epitaxial Si1-xGex stressors, using nano-beam electron diffraction and finite elements method. Combining the two methods disclosed dynamic strain distribution in the source/drain and channel region of the fin structure, and the effects of dimensional factors such as the stressor thickness and fin width, offering valuable information for device design.

UR - https://www.scopus.com/pages/publications/84907313353

U2 - 10.1063/1.4893926

DO - 10.1063/1.4893926

M3 - Article

AN - SCOPUS:84907313353

SN - 0003-6951

VL - 105

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 8

M1 - 083104

ER -

Strain characterization of fin-shaped field effect transistors with SiGe stressors using nanobeam electron diffraction

Abstract

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