Sputter deposition of moSi2 film as a barrier for Nb-based josephson junction

Yonuk Chong; Se Il Park; Kyu Tae Kim

doi:10.1109/TASC.2009.2019074

Sputter deposition of moSi₂ film as a barrier for Nb-based josephson junction

Yonuk Chong, Se Il Park, Kyu Tae Kim

Korea Research Institute of Standards and Science

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

Recently, sputter-deposited MoSi₂ films have been successfully used as a barrier material in Nb/MoSi₂/Nb Josephson junctions. In this report, we present our study on the deposition conditions of MoSi ₂ film for electronics application. We investigated the film stress and sheet resistance as a function of deposition conditions. We also studied the micro-structural change in the film according to the deposition conditions using electron microscopes. We suggest that the thermal strain need to be considered in order to get a reliable junction.

Original language	English
Article number	5067267
Pages (from-to)	238-241
Number of pages	4
Journal	IEEE Transactions on Applied Superconductivity
Volume	19
Issue number	3
DOIs	https://doi.org/10.1109/TASC.2009.2019074
State	Published - Jun 2009
Externally published	Yes

Keywords

Josephson junction
Silicide
Sputter
Stress
Thin film

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10.1109/TASC.2009.2019074

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abstract = "Recently, sputter-deposited MoSi2 films have been successfully used as a barrier material in Nb/MoSi2/Nb Josephson junctions. In this report, we present our study on the deposition conditions of MoSi 2 film for electronics application. We investigated the film stress and sheet resistance as a function of deposition conditions. We also studied the micro-structural change in the film according to the deposition conditions using electron microscopes. We suggest that the thermal strain need to be considered in order to get a reliable junction.",

keywords = "Josephson junction, Silicide, Sputter, Stress, Thin film",

author = "Yonuk Chong and Park, \{Se Il\} and Kim, \{Kyu Tae\}",

year = "2009",

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language = "English",

volume = "19",

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AU - Chong, Yonuk

AU - Park, Se Il

AU - Kim, Kyu Tae

PY - 2009/6

Y1 - 2009/6

N2 - Recently, sputter-deposited MoSi2 films have been successfully used as a barrier material in Nb/MoSi2/Nb Josephson junctions. In this report, we present our study on the deposition conditions of MoSi 2 film for electronics application. We investigated the film stress and sheet resistance as a function of deposition conditions. We also studied the micro-structural change in the film according to the deposition conditions using electron microscopes. We suggest that the thermal strain need to be considered in order to get a reliable junction.

AB - Recently, sputter-deposited MoSi2 films have been successfully used as a barrier material in Nb/MoSi2/Nb Josephson junctions. In this report, we present our study on the deposition conditions of MoSi 2 film for electronics application. We investigated the film stress and sheet resistance as a function of deposition conditions. We also studied the micro-structural change in the film according to the deposition conditions using electron microscopes. We suggest that the thermal strain need to be considered in order to get a reliable junction.

KW - Josephson junction

KW - Silicide

KW - Sputter

KW - Stress

KW - Thin film

UR - https://www.scopus.com/pages/publications/68649128088

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JF - IEEE Transactions on Applied Superconductivity

IS - 3

M1 - 5067267

ER -

Sputter deposition of moSi₂ film as a barrier for Nb-based josephson junction

Abstract

Keywords

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