Spin-dependent transport in a two-dimensional GaAs electron system

C. T. Liang; Tsai Yu Huang; Yu Ming Cheng; Chao Han Pao; Chun Cheng Lee; Gil Ho Kim; J. Y. Leem

Spin-dependent transport in a two-dimensional GaAs electron system

C. T. Liang
, Tsai Yu Huang
, Yu Ming Cheng
, Chao Han Pao
, Chun Cheng Lee
, Gil Ho Kim
, J. Y. Leem

Research output: Contribution to journal › Article › peer-review

Abstract

We have measured the low-temperature electron transport properties in a front-gated GaAs/Al_0.33Ga_0.67As heterostructure. Collapse of spin-splitting and an enhanced Lande |g|-factor at both Landau level filling factors v -3 and v = 1 were observed. Our experimental results show direct evidence that the electron-electron interactions are stronger at v = 3 than those at v = 1 over approximately the same perpendicular magnetic field range. Moreover, we observed an enhancement of the magnetoresistivity of a two-dimensional electron system with an increasing parallel magnetic field. Using a simple model, we suggest that the increase of the magnetoresistivity is due to spin but the model over-estimates the Lande |g| factor in our system.

Original language	English
Pages (from-to)	369-374
Number of pages	6
Journal	Chinese Journal of Physics
Volume	39
Issue number	4
State	Published - 2001
Externally published	Yes

Cite this

@article{736ccaa2328449188db478943a7bc94d,

title = "Spin-dependent transport in a two-dimensional GaAs electron system",

abstract = "We have measured the low-temperature electron transport properties in a front-gated GaAs/Al0.33Ga0.67As heterostructure. Collapse of spin-splitting and an enhanced Lande |g|-factor at both Landau level filling factors v -3 and v = 1 were observed. Our experimental results show direct evidence that the electron-electron interactions are stronger at v = 3 than those at v = 1 over approximately the same perpendicular magnetic field range. Moreover, we observed an enhancement of the magnetoresistivity of a two-dimensional electron system with an increasing parallel magnetic field. Using a simple model, we suggest that the increase of the magnetoresistivity is due to spin but the model over-estimates the Lande |g| factor in our system.",

author = "Liang, \{C. T.\} and Huang, \{Tsai Yu\} and Cheng, \{Yu Ming\} and Pao, \{Chao Han\} and Lee, \{Chun Cheng\} and Kim, \{Gil Ho\} and Leem, \{J. Y.\}",

year = "2001",

language = "English",

volume = "39",

pages = "369--374",

journal = "Chinese Journal of Physics",

issn = "0577-9073",

publisher = "Elsevier B.V.",

number = "4",

}

TY - JOUR

T1 - Spin-dependent transport in a two-dimensional GaAs electron system

AU - Liang, C. T.

AU - Huang, Tsai Yu

AU - Cheng, Yu Ming

AU - Pao, Chao Han

AU - Lee, Chun Cheng

AU - Kim, Gil Ho

AU - Leem, J. Y.

PY - 2001

Y1 - 2001

N2 - We have measured the low-temperature electron transport properties in a front-gated GaAs/Al0.33Ga0.67As heterostructure. Collapse of spin-splitting and an enhanced Lande |g|-factor at both Landau level filling factors v -3 and v = 1 were observed. Our experimental results show direct evidence that the electron-electron interactions are stronger at v = 3 than those at v = 1 over approximately the same perpendicular magnetic field range. Moreover, we observed an enhancement of the magnetoresistivity of a two-dimensional electron system with an increasing parallel magnetic field. Using a simple model, we suggest that the increase of the magnetoresistivity is due to spin but the model over-estimates the Lande |g| factor in our system.

AB - We have measured the low-temperature electron transport properties in a front-gated GaAs/Al0.33Ga0.67As heterostructure. Collapse of spin-splitting and an enhanced Lande |g|-factor at both Landau level filling factors v -3 and v = 1 were observed. Our experimental results show direct evidence that the electron-electron interactions are stronger at v = 3 than those at v = 1 over approximately the same perpendicular magnetic field range. Moreover, we observed an enhancement of the magnetoresistivity of a two-dimensional electron system with an increasing parallel magnetic field. Using a simple model, we suggest that the increase of the magnetoresistivity is due to spin but the model over-estimates the Lande |g| factor in our system.

UR - https://www.scopus.com/pages/publications/0008807656

M3 - Article

AN - SCOPUS:0008807656

SN - 0577-9073

VL - 39

SP - 369

EP - 374

JO - Chinese Journal of Physics

JF - Chinese Journal of Physics

IS - 4

ER -

Spin-dependent transport in a two-dimensional GaAs electron system

Abstract

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